IP Library Granted Patent US 11,795,392
Granted Patent B2
US 11,795,392 · App. 17/234,845 · Granted Oct 24, 2023

Cadmium-free quantum dot, quantum dot-polymer composite, and electronic device including the same

Inventors: Hyeyeon Yang (Suwon-si, KR); Jooyeon Ahn (Suwon-si, KR); Taekhoon Kim (Hwaseong-si, KR); Shang Hyeun Park (Yongin-si, KR); Nayoun Won (Yongin-si, KR); Mi Hye Lim (Suwon-si, KR); Shin Ae Jun (Seongnam-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
C09K11/883C09K11/025C09K11/0883G02B6/005H10K50/115H10K59/38B82Y20/00B82Y40/00
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Quick Facts
Patent No.
US 11,795,392
App. No.
17/234,845
Granted
Oct 24, 2023
Kind
B2
Abstract

A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.

Claims (71)

1. A quantum dot, comprising

a core comprising a first semiconductor nanocrystal comprising indium and phosphorus,

a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus,

a first shell disposed between the core and the light emitting layer, the first shell comprising a semiconductor nanocrystal comprising

zinc, and

selenium, and

a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising

zinc, and

selenium, sulfur, or a combination thereof,

wherein the quantum dot does not comprise cadmium, and

the quantum dot is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers.

2. The quantum dot of claim 1 , wherein the core has a size of about 1.5 nanometers to about 3 nanometers.

3. The quantum dot of claim 1 , wherein the light emitting layer has a thickness of less than or equal to about 0.5 nanometers.

4. The quantum dot of claim 1 , wherein the first shell has a thickness of about 0.3 nanometers to about 1.2 nanometers.

5. The quantum dot of claim 1 , wherein the second shell has a thickness of greater than or equal to about 0.3 nanometers.

6. The quantum dot of claim 1 , wherein

the first shell of the quantum dot is disposed directly on the core, and

the first shell of the quantum dot comprises

a first layer comprising a third semiconductor nanocrystal, and

a second layer disposed on the first layer, the second layer comprising a fourth semiconductor nanocrystal,

wherein the third semiconductor nanocrystal and the fourth semiconductor nanocrystal have different compositions.

7. The quantum dot of claim 6 , wherein the first layer of the first shell has a thickness of about 0.1 nanometers to about 1.0 nanometers, and the second layer has a thickness of about 0.2 nanometers to about 1.1 nanometers.

8. The quantum dot of claim 1 , wherein the second shell comprises

a first layer disposed directly on the light emitting layer, the first layer comprising a fifth semiconductor nanocrystal, and

a second layer disposed on the first layer, the second layer comprising a sixth semiconductor nanocrystal,

wherein the fifth semiconductor nanocrystal and the sixth semiconductor nanocrystal have different compositions.

9. The quantum dot of claim 8 , wherein the fifth semiconductor nanocrystal comprises zinc and selenium, and the sixth semiconductor nanocrystal comprises zinc and sulfur.

10. The quantum dot of claim 9 , wherein the sixth semiconductor nanocrystal does not comprise selenium.

11. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal further comprises zinc.

12. The quantum dot of claim 1 , wherein the quantum dot has a first absorption peak in the ultraviolet-visible absorption spectrum between about 390 nanometers and about 500 nanometers.

13. The quantum dot of claim 1 , wherein the light absorbance per particle of the quantum dot is greater than or equal to about 1.0E-17.

14. The quantum dot of claim 1 , wherein the quantum dot comprises RCOOH, RCOOCOR, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RPO(OH) 2 , R 2 POOH, wherein, R and R′ are independently a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C30 substituted or unsubstituted aromatic hydrocarbon group, or a combination thereof, or a combination thereof, on a surface thereof.

15. A quantum dot, comprising

a core comprising a first semiconductor nanocrystal comprising indium and phosphorus,

a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus,

a first shell disposed between the core and the light emitting layer, the first shell being disposed directly on the core, the first shell of the quantum dot comprising

a first layer comprising a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising

zinc, and

selenium, and

a second layer disposed on the first layer, the second layer comprising a fourth semiconductor nanocrystal, the fourth semiconductor nanocrystal comprising

zinc, and

sulfur, and

a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising

zinc, and

selenium, sulfur, or a combination thereof,

wherein the quantum dot does not comprise cadmium, and

wherein the quantum dot is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers, and

wherein the third semiconductor nanocrystal and the fourth semiconductor nanocrystal have different compositions.

16. The quantum dot of claim 15 , wherein the fourth semiconductor nanocrystal does not comprise selenium.

17. A quantum dot-polymer composite comprising

a polymer matrix; and

quantum dots of claim 1 dispersed in the polymer matrix.

18. The quantum dot-polymer composite of claim 17 , wherein the polymer matrix comprises a thiolene resin, a (meth)acrylate polymer, a urethane resin, an epoxy polymer, vinyl polymer, a silicone resin, or a combination thereof.

19. A display device comprising

a light source and a luminescent element,

wherein the luminescent element comprises the quantum dot-polymer composite of claim 17 ,

the light source is configured to provide the luminescent element, with incident light.

20. An electroluminescent device, comprising

a first electrode and a second electrode facing each other; and

a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer comprising a plurality of quantum dots,

wherein each of the plurality of quantum dots comprises:

a core comprising a first semiconductor nanocrystal comprising indium and phosphorus,

a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus,

a first shell disposed between the core and the light emitting layer, the first shell comprising a semiconductor nanocrystal comprising

zinc, and

selenium, sulfur, or a combination thereof, and

a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising

zinc, and

selenium, sulfur, or a combination thereof,

wherein the plurality of quantum dots do not comprise cadmium, and

wherein the plurality of quantum dots are single light emitting quantum dots having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2024
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 068174/0916 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2021
From: YANG, HYEYEON; AHN, JOOYEON; KIM, TAEKHOON; PARK, SHANG HYEUN; WON, NAYOUN; LIM, MI HYE; JUN, SHIN AE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 056165/0245 →
Priority Claims (1)
KR 10-2020-0047205 · Apr 20, 2020 · national
Continuity (1)
Related Publication 20210324268A1 · Oct 21, 2021
Cited By (1)
US 12,313,865