IP Library Granted Patent US 11,780,778
Granted Patent B2
US 11,780,778 · App. 17/254,219 · Granted Oct 10, 2023

Use of diamondene fragments in making polycrystalline diamond cutters and polycrystalline diamond cutters containing diamondene fragments

Inventor: Gary Flood (Canal Winchester, OH)
Assignee: DIAMOND INNOVATIONS, INC.
C04B35/528B24D18/00C04B35/62222C04B35/645C04B2235/427C04B2235/612
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,780,778
App. No.
17/254,219
Granted
Oct 10, 2023
Kind
B2
Abstract

Provided is a polycrystalline diamond cutter with a substrate and a diamond body in which the diamond body includes bonded diamond particles and discernable diamondene fragments. The polycrystalline diamond cutter is manufactured by a high pressure high temperature method that includes sintering a diamond feed layer in which the diamond feed layer includes diamond particles and diamondene fragments.

Claims (23)

1. A method of making a polycrystalline diamond cutter, the method comprising:

forming an assembly comprising along an axis of the assembly a refractory container, a diamond feed layer, and a substrate; and

processing the assembly under high pressure high temperature sintering conditions (HPHT) from 4 GPa to 8 GPa, and from 1200° C. to 1700° C., to sinter the diamond feed into a diamond body affixed to the substrate;

wherein the diamond feed layer comprises diamond particles and diamondene fragments.

2. The method of claim 1 , wherein the wt. % of diamondene fragments in the diamond feed layer is between 0.001 wt. % and 10 wt. %.

3. The method of claim 1 , wherein the wt. % of diamondene fragments in the diamond feed layer is between 0.01 wt. % and 5 wt. %.

4. The method of claim 1 , wherein the wt. % of diamondene fragments in the diamond feed layer is between 0.1 wt. % and 1 wt. %.

5. The method of claim 1 , wherein the diamond feed layer comprises a catalyst material.

6. The method of claim 1 , wherein the substrate comprises a catalyst material.

7. The method of claim 1 , wherein the diamond body comprises a plurality of bonded diamond particles and a plurality of interstitial regions.

8. The method of claim 7 , wherein a portion of the interstitial regions include a catalyst material or catalyst material sintering residue.

9. The method of claim 7 , further comprising leaching a portion of the sintered diamond body to form interstitial regions substantially free of catalyst material or catalyst material sintering residue.

10. The method of claim 9 , wherein the portion of the sintered diamond body comprising interstitial regions substantially free of catalyst material or sintering residue thereof extends from a working surface into an interior volume of the diamond body.

11. The method of claim 1 , further comprising finish machining the diamond body.

12. The method of claim 11 , wherein finish machining includes one or more of laser cutting, electrical discharge machining, grinding, and polishing.

13. A polycrystalline diamond cutter comprising a diamond body and a substrate, wherein the diamond body has one or more working surfaces, and wherein the diamond body comprises a plurality of bonded diamond particles, a plurality of bonded diamondene fragments, and a plurality of interstitial regions.

14. The polycrystalline diamond cutter of claim 13 , wherein the volume fraction of discernable diamondene fragments in the diamond body is up to 5 vol. %.

15. The polycrystalline diamond cutter of claim 13 , wherein the volume fraction of discernable diamondene fragments in the diamond body is about 5 vol. %.

16. The polycrystalline diamond cutter of claim 13 , wherein the volume fraction of discernable diamondene fragments in the diamond body is between 0.0005 vol. % and 5 vol. %.

17. The polycrystalline diamond cutter of claim 13 , wherein a portion of the interstitial regions include a catalyst material or catalyst material sintering residue.

18. The polycrystalline diamond cutter of claim 13 , wherein a portion of the interstitial regions are substantially free of catalyst material or catalyst material sintering residue.

19. The polycrystalline diamond cutter of claim 18 , wherein the portion of the diamond body comprising interstitial regions substantially free of catalyst material or catalyst material sintering residue, extends from a working surface into an interior volume of the diamond body.

20. The polycrystalline diamond cutter of any one of claims 13 to 19 , wherein a portion of a working surface is beveled or chamfered.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2023
From: FLOOD, GARY
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 064261/0533 →
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
Continuity (1)
Related Publication 20210261466A1 · Aug 26, 2021