IP Library Patent Application 17255420
Patent Application
App. No. 17/255,420

HYBRID METHOD OF FORMING MICROSTRUCTURE ARRAY MOLDS, METHODS OF MAKING MICROSTRUCTURE ARRAYS, AND METHODS OF USE

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Quick Facts
Patent No.
US None
App. No.
17/255,420
Abstract

A method of forming a master mold ( 52 ), comprising: a) forming a plurality of microstructure portions ( 42 ) in a substrate formed of a first material by a first micromachining process, each microstructure portion comprising a shaft ( 40 ) and a distal tip ( 38 ); b) in preparing a negative mold ( 46 ) of the plurality of microstructure portions, wherein the mold is formed of a second material and comprises a plurality of cavities ( 48 ) corresponding to each microstructure portion in the plurality of microstructure portions ( 42 ); c) electroplating a metal ( 50 ) onto the negative mold to fill each cavity in the plurality of cavities and to form abase layer ( 54 ) extending from the negative mold; d) forming a proximal section ( 56 ) for each of the microstructures in the base layer using a second micromachining process (e.g. mechanical micromachining); and e) before or after said step d), removing the negative mold from the metal to form a master mold.

Claims (46)

1 . A method of forming a master mold, comprising:

a) forming a plurality of microstructure portions in a substrate formed of a first material by a first micromachining process, each microstructure portion comprising a shaft and a distal tip;

b) preparing a negative mold of the plurality of microstructure portions, wherein the mold is formed of a second material and comprises a plurality of cavities corresponding to each microstructure portion in the plurality of microstructure portions;

c) electroplating a metal onto the negative mold to fill each cavity in the plurality of cavities and to form a base layer extending from the negative mold;

d) forming a proximal section for each of the microstructures in the base layer using a second micromachining process; and

e) before or after said step d), removing the negative mold from the metal to form a master mold.

2 . The method of claim 1 , wherein the second micromachining process is a mechanical micromachining process.

3 . The method of claim 1 , wherein the first material is selected from silicon and a positive photoresist material.

4 . The method of claim 1 , wherein said first micromachining process comprises a photolithography process.

5 . The method of claim 4 , wherein said photolithography comprises:

(i) applying a layer of photoresist on the first material;

(ii) applying a masking material onto the photoresist layer, wherein the masking material covers at least a portion or the photoresist layer;

(iii) curing the portion of the photoresist layer not covered by the masking material;

(iv) isotropic etching the substrate to create the distal tip section;

(v) etching the substrate to create the shaft portion;

(vi) wet thermal oxidizing the microstructures; and

(vii) isotropic wet etching the microstructures.

6 . The method of claim 5 , wherein the first material is silicon, and the method further comprises forming a layer of silicon dioxide on the silicon substrate using a thermal oxidation process prior to step DI.

7 . The method of claim 5 , wherein the thermal oxidation process in step DI is a wet thermal oxidation process.

8 . The method of claim 5 , wherein the photoresist material is an epoxy-based negative photoresist.

9 . The method of claim 8 , wherein the photoresist material is SUB.

10 . The method of claim 5 , wherein the masking material comprises a plurality of apertures, wherein the photoresist layer exposed by the apertures is cured in step (iii).

11 . The method of claim 5 , further comprising:

removing the masking material and any uncured photoresist material after step (iii).

12 . The method of claim 11 , wherein the masking material and uncured photoresist are removed using a solvent.

13 . The method of claim 5 , wherein the etching of step (v) comprises anisotropic etching.

14 . The method of claim 5 , wherein step (v) comprises deep reactive-ion etching.

15 . The method of claim 5 , further comprising prior to step DI, cleaning the polymeric material.

16 . The method of claim 15 , wherein said cleaning comprises chemical cleaning.

17 . The method of claim 16 , wherein the chemical cleaning comprises an RCA cleaning process.

18 . The method of claim 5 , wherein step (iv) and/or step (v) comprises plasma etching.

19 . The method of claim 18 , wherein the plasma etching comprises a plasma gas selected from SF 6 , carbon tetrachloride, oxygen, and CHF 3 .

20 . The method of claim 5 , further comprising removing any remaining photoresist from the first material after step (v).

21 . The method of claim 1 , wherein the second material is a polymeric material.

22 . The method of claim 1 , wherein the second material is a silicone material.

23 . The method of claim 21 , wherein the second polymeric material is selected from the group consisting of polydimethylsiloxane (PDMS), polycarbonate, polyetherimide, and polyethylene terephthalate.

24 . The method of claim 1 , wherein the electroplating metal is selected from copper, nickel, chromium, and gold.

25 . The method of claim 1 , wherein the proximal section is micromachined to have a funnel or pyramidal shape.

26 . A method of forming a casting mold comprising:

preparing a negative mold of the master mold formed in claim 1 .

27 . A method of preparing a microstructure array, comprising:

(i′) dispensing a polymer matrix solution or suspension comprising at least one therapeutic agent on a casting mold of claim 26 ;

(ii′) drying the polymer matrix solution;

(iii′) dispensing a polymer matrix backing solution on the casting mold;

(iv′) drying the polymer matrix backing solution to form the microstructure array; and

(v′) demolding the microstructure array.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBER PREVIOUSLY RECORDED AT REEL: 61852 FRAME: 207. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jun 30, 2025
From: CORIUM, INC.
To: CORIUM PHARMA SOLUTIONS, INC.
Reel/Frame 071915/0691 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 24, 2022
From: CORIUM, INC.
To: CORIUM PHARMA SOLUTIONS, INC.
Reel/Frame 062760/0731 →
RELEASE OF SECURITY INTEREST Recorded Oct 17, 2022
From: HERCULES CAPITAL, INC.
To: CORIUM, INC.
Reel/Frame 061687/0281 →
SECURITY INTEREST Recorded Oct 17, 2022
From: CORIUM PHARMA SOLUTIONS, INC.
To: SILICON VALLEY BANK, AS ADMINISTRATIVE AGENT
Reel/Frame 061689/0581 →
CHANGE OF NAME Recorded Oct 14, 2022
From: CORIUM, INC.
To: CORIUM PHARMA SOLUTIONS, INC.
Reel/Frame 061852/0207 →
SECURITY INTEREST Recorded Sep 24, 2021
From: CORIUM, INC.
To: HERCULES CAPITAL, INC., AS AGENT
Reel/Frame 057597/0907 →
CHANGE OF NAME Recorded Dec 22, 2020
From: CORIUM INTERNATIONAL, INC.
To: CORIUM, INC.
Reel/Frame 054837/0291 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2020
From: SHASTRY, ASHUTOSH; CHANG, WESLEY; SINGH, PARMINDER
To: CORIUM INTERNATIONAL, INC.
Reel/Frame 054734/0451 →