Semiconductor device
In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.
1. A semiconductor device comprising:
a mounting portion of a lead frame on which a semiconductor element is mounted and which is made of metal;
a heat dissipation portion opposite to the mounting portion; and
a resin sealing the mounting portion on which the semiconductor element is mounted and the heat dissipation portion, wherein
the lead frame has a scale-like portion on which scale-shaped projections are consecutively formed, and
the scale-like portion is provided over both sides across a resin boundary portion which is a boundary between inside and outside of an area sealed by the resin on the lead frame, wherein the scale-like portion is configured to provide a discharge path for a gas from the inside of the area to the outside of the area at a time of a molding of the resin to the lead frame.
2. The semiconductor device according to claim 1 , wherein
the scale-like portion includes a scale portion on which the scale-shaped projections are consecutively provided, first and second ridge portions provided on first and second sides of the scale portion, respectively, the first and second ridge portions being raised to be higher than the scale portion, and an area between the first and second ridge portions having a groove shape.
3. The semiconductor device according to claim 1 , wherein
a plurality of the scale-like portions are provided at intervals from each other.
4. The semiconductor device according to claim 1 , wherein
the scale-like portion is provided in a straight line, a longitudinal direction of the scale-like portion is perpendicular to the resin boundary portion, and the discharge path is parallel with the longitudinal direction.
5. The semiconductor device according to claim 2 , wherein
the scale-like portion is provided in a straight line, and a longitudinal direction of the scale-like portion is perpendicular to the resin boundary portion.
6. The semiconductor device according to claim 3 , wherein
the scale-like portion is provided in a straight line, and a longitudinal direction of the scale-like portion is perpendicular to the resin boundary portion.
7. The semiconductor device according to claim 1 , wherein
the scale-like portion is provided in a straight line, a longitudinal direction of the sc ale-like portion is parallel to the resin boundary portion, and the discharge path is perpendicular to the longitudinal direction.
8. The semiconductor device according to claim 2 , wherein
the scale-like portion is provided in a straight line, and a longitudinal direction of the scale-like portion is parallel to the resin boundary portion.
9. The semiconductor device according to claim 3 , wherein
the scale-like portion is provided in a straight line, and a longitudinal direction of the scale-like portion is parallel to the resin boundary portion.
10. A semiconductor device comprising:
a mounting portion of a lead frame on which a semiconductor element is mounted and which is made of metal;
a heat dissipation portion opposite to the mounting portion; and
a resin sealing the mounting portion on which the semiconductor element is mounted and the heat dissipation portion, wherein
the lead frame has a scale-like portion on which scale-shaped projections are consecutively formed, and
the scale-like portion is provided over both sides across a resin boundary portion which is a boundary between inside and outside of an area sealed by the resin on the lead frame, wherein the resin has a gate breaking trace at a part of a side surface thereof, and the scale-like portion is provided at the resin boundary portion to which a straight distance from the gate breaking trace is longest.
11. A semiconductor device comprising:
a mounting portion of a lead frame on which a semiconductor element is mounted and which is made of metal;
a heat dissipation portion opposite to the mounting portion; and
a resin sealing the mounting portion on which the semiconductor element is mounted and the heat dissipation portion, wherein
the lead frame has a scale-like portion on which scale-shaped projections are consecutively formed, and
the scale-like portion is provided over both sides across a resin boundary portion which is a boundary between inside and outside of an area sealed by the resin on the lead frame, wherein the resin has a gate breaking trace at a part of a side surface thereof, and the scale-like portion is provided at the resin boundary portion on a side opposite to the side surface having the gate breaking trace.
12. The semiconductor device according to claim 1 , wherein
the scale-like portion is provided over an entire area of the resin boundary portion.
13. The semiconductor device according to claim 1 , comprising a metal plating covering a part or an entirety of a surface of the lead frame, wherein the scale-like portion is formed at the metal plating.
14. The semiconductor device according to claim 1 , comprising a metal plating covering a part or an entirety of a surface of the lead frame, wherein the scale-like portion is formed at the metal plating and the lead frame.
15. The semiconductor device according to claim 1 , wherein
the resin includes a first resin sealing the mounting portion and a second resin sealing the heat dissipation portion, and the heat dissipation portion is provided with a thin molding portion formed by the second resin, and
the scale-like portion is provided over both sides across the resin boundary portion of an area sealed by the second resin on the heat dissipation portion.
16. The semiconductor device according to claim 15 , wherein the scale-like portion is provided over both sides across the resin boundary portion of an area sealed by the first resin on the mounting portion.