IP Library Granted Patent US 11,353,349
Granted Patent B2
US 11,353,349 · App. 17/256,908 · Granted Jun 7, 2022

Flow-rate sensor

Inventors: Hiroki Nakatsuchi (Tokyo, JP); Yasuo Onose (Hitachinaka, JP); Takayuki Yogo (Hitachinaka, JP); Ryotaro Shimada (Tokyo, JP)
Assignee: Hitachi Astemo, Ltd.
G01F1/692G01F1/38G01F1/684
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Quick Facts
Patent No.
US 11,353,349
App. No.
17/256,908
Granted
Jun 7, 2022
Kind
B2
Abstract

A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.

Claims (20)

1. A flow-rate sensor comprising:

a lead frame;

a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed;

a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip; and

resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip, wherein

a lower side resin portion of the resin covering another surface side, which is on an opposite side to the one surface side of the lead frame, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm,

the thinned portion extends from a position facing an inside of the void portion provided below the diaphragm to a position facing an outside of the void portion, and

an opening is provided in a region of the thinned portion facing a center portion region of the diaphragm.

2. The flow-rate sensor according to claim 1 , wherein

an upper side resin portion of the resin that covers the one surface side of the lead frame includes a first raised portion that covers one side region of the semiconductor chip, and a second raised portion that is provided so as to be separated from the first raised portion with the flow passage opening portion sandwiched therebetween and covers an opposite side region on a side opposite to the one side region of the semiconductor chip, and the thinned portion has a shape in which a length along the flow passage opening portion extending in a direction in which a fluid to be detected flows is larger than a length in a direction orthogonal to the direction along the flow passage opening portion.

3. The flow-rate sensor according to claim 2 , wherein

the thinned portion has a polygonal shape having four or more vertices or sides, or an elliptical shape in a plan view.

4. The flow-rate sensor according to claim 2 , wherein

the thinned portion has a cross shape including a vertical portion extending in the direction along the flow passage opening portion and a horizontal portion extending in the direction orthogonal to the direction along the flow passage opening portion.

5. The flow-rate sensor according to claim 4 , wherein

the thinned portion is formed in a shape including a step portion connecting the vertical portion and the horizontal portion at an intersection between the vertical portion and the horizontal portion.

6. The flow-rate sensor according to claim 1 , wherein

an inner side surface and an outer side surface of the thinned portion are inclined surfaces that extend outward in a thickness direction of the resin.

7. The flow-rate sensor according to claim 1 , wherein

a linear expansion coefficient of the resin is smaller than a linear expansion coefficient of the lead frame.

Assignments (2)
CHANGE OF NAME Recorded Nov 30, 2021
From: HITACHI AUTOMOTIVE SYSTEMS, LTD.
To: HITACHI ASTEMO, LTD.
Reel/Frame 058481/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2020
From: NAKATSUCHI, HIROKI; ONOSE, YASUO; YOGO, TAKAYUKI; SHIMADA, RYOTARO
To: HITACHI AUTOMOTIVE SYSTEMS, LTD.
Reel/Frame 054773/0182 →