COPPER-NICKEL-SILICON ALLOYS WITH HIGH STRENGTH AND HIGH ELECTRICAL CONDUCTIVITY
A copper alloy that does not contain beryllium and has a 0.2% offset yield strength of at least 80 ksi and an electrical conductivity of at least 48% IACS is disclosed. The copper alloy contains nickel, silicon, chromium, manganese, zirconium, and balance copper. The alloy is prepared by cold working, solution annealing, and aging. The alloy can be used for example, as a heat sink.
1 . A copper alloy, comprising:
from about 1.0 wt % to about 4 wt % nickel;
from about 0.2 wt % to about 2 wt % silicon;
from about 0.1 wt % to about 1 wt % chromium;
from about 0.05 wt % to about 0.5 wt % manganese;
from about 0.01 wt % to about 0.2 wt % zirconium; and
balance copper;
wherein the alloy has a 0.2% offset yield strength of at least 80 ksi and a conductivity of at least 48% IACS.
2 . The copper alloy of claim 1 , wherein the alloy comprises: about 1.2 wt % to about 1.4 wt % nickel, about 0.3 wt % to about 0.4 wt % silicon, about 0.3 wt % to about 0.4 wt % chromium, about 0.08 wt % to about 0.12 wt % manganese; about 0.02 wt % to about 0.06 wt % zirconium; and balance copper.
3 . The copper alloy of claim 1 , wherein the alloy does not contain beryllium, titanium, iron, cobalt, magnesium, or boron.
4 . The copper alloy of claim 1 , wherein the alloy has an ultimate tensile strength of at least 88 ksi.
5 . The copper alloy of claim 1 , wherein the alloy has an elastic modulus of at least 20 million psi.
6 . The copper alloy of claim 1 , wherein the alloy has a % total elongation of at least 8%.
7 . The copper alloy of claim 1 , wherein the alloy has a ductility of at least 5% to about 15%.
8 . The copper alloy of claim 1 , wherein the alloy has a formability ratio of 0.4/1 or lower.
9 . The copper alloy of claim 1 , containing silicides formed from silicon, chromium, nickel, and manganese.
10 . The copper alloy of claim 1 , having a 0.2% offset yield strength of at least 80 ksi, a conductivity of at least 48% LACS, and a % TE of at least 8%.
11 . The copper alloy of claim 1 , having a 0.2% offset yield strength of at least 80 ksi, a conductivity of at least 49% IACS, and a UTS of at least 90 ksi.
12 . A process for making a copper alloy that does not contain beryllium and has a 0.2% offset yield strength of at least 80 ksi and a conductivity of at least 48% IACS, comprising:
cold working a copper-nickel-silicon-chromium-manganese-zirconium alloy to a percentage of cold working (% CW) of about 80% to about 95%, solution annealing the cold-worked copper-nickel-silicon-chromium-manganese-zirconium alloy; and
aging the solution-annealed copper-nickel-silicon-chromium-manganese-zirconium alloy to obtain the copper alloy with a 0.2% offset yield strength of at least 80 ksi and a conductivity of at least 48% IACS.
13 . The process of claim 12 , wherein the solution annealing is performed at a temperature of about 900° C. to about 1000° C. for a time period of about 5 minutes to about 20 minutes.
14 . The process of claim 12 , wherein the aging is performed at a temperature of about 400° C. to about 460° C. for a time period of about 6 hours to about 60 hours.
15 . The process of claim 12 , wherein the aging is performed at a temperature of about 400° C. to about 460° C. for a time period of about 6 hours to about 18 hours.
16 . The copper alloy formed by the process of claim 12 .
17 . An article formed from a copper-nickel-silicon-chromium-manganese-zirconium alloy, wherein the alloy has a 0.2% offset yield strength of at least 80 ksi and a conductivity of at least 48% IACS.
18 . The article of claim 17 , wherein the alloy comprises:
from about 1.0 wt % to about 4 wt % nickel;
from about 0.2 wt % to about 2 wt % silicon;
from about 0.1 wt % to about 1 wt % chromium;
from about 0.05 wt % to about 0.5 wt % manganese;
from about 0.01 wt % to about 0.2 wt % zirconium; and
balance copper.
19 . The article of claim 17 , wherein the article is a heat sink; an electrical connector; an electronic connector; a wiring harness terminal; an electric vehicle charger contact; a high voltage/current/power terminal contact; a power connector contact; a midplane connector, a backplane connector, a card edge connector, a photovoltaic system connector; an appliance power contact; a computer power contact; a heat spreader, a bushing or bearing surface; or a component for an electronic device or an electrical device.
20 . A process of using a copper-nickel-silicon-chromium-manganese-zirconium alloy that has a 0.2% offset yield strength of at least 80 ksi and a conductivity of at least 48% IACS, comprising:
stamping an article from a strip of the copper-nickel-silicon-chromium-manganese-zirconium alloy.