Optoelectronic semiconductor device and flashlight

1. A flash light, comprising:

a semiconductor device, comprising:

a carrier having electrical connection surfaces on a carrier upper side;

at least four semiconductor chips configured to emit light of mutually different colors; and

wherein the semiconductor chips are mounted close to each other on the connection surfaces such that a distance between adjacent semiconductor chips is at most 100 μm in a top view on the carrier upper side; and

a control unit,

wherein control unit is configured to energize the semiconductor chips in a pulsed manner.

2. The flash light according to claim 1 ,

wherein

at least one of the semiconductor chips is configured to generate blue light,

at least one of the semiconductor chips is configured to generate cyan-colored light,

at least one of the semiconductor chips being configured to generate green light,

at least one of the semiconductor chips is configured to generate yellow-orange light, and

at least one of the semiconductor chips is configured to generate red light.

3. The flash light according to claim 1 ,

wherein there are two semiconductor chips for red light and only one semiconductor chip for any other color, and

wherein the semiconductor chips are arranged in two rows and, as seen in plan view of the carrier upper side, are as point-symmetrical as possible with respect to their emission properties.

4. The flash light according to claim 1 , wherein

exactly one of the semiconductor chips is configured to generate blue light,

exactly one of the semiconductor chips is configured to generate cyan-colored light,

exactly one of the semiconductor chips is configured to generate green light,

exactly one of the semiconductor chips is configured to generate yellow-orange light,

exactly two of the semiconductor chips are configured to generate red light, and

the semiconductor chips are arranged in two rows and, as seen in top view on the carrier upper side, as point-symmetrically as possible with respect to their emission properties.

5. The flash light according to claim 1 , wherein only one imaging optics is arranged downstream of the semiconductor chips as an optical element, so that the flash light is free of a light mixing device for the light of mutually different colors from the semiconductor chips.

6. An optoelectronic semiconductor device comprising

a carrier having electrical connection surfaces on a carrier upper side, and

having a plurality of semiconductor chips which are configured to emit light of mutually different colors,

wherein

the semiconductor chips are mounted close to each other on the connection surfaces such that a distance between adjacent semiconductor chips is at most 100 μm in a top view on the carrier upper side,

exactly one of the semiconductor chips is configured to generate blue light,

exactly one of the semiconductor chips is configured to generate cyan-colored light,

exactly one of the semiconductor chips is configured to generate green light,

exactly one of the semiconductor chips is configured to generate yellow-orange light,

exactly two of the semiconductor chips are configured to generate red light, and

the semiconductor chips are arranged in two rows and, as seen in top view on the carrier upper side, as point-symmetrically as possible with respect to their emission properties.

7. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips for various colors in a CIE standard chromaticity diagram each show, with a tolerance of 0.003 units, the following CIE x coordinates; CIE y coordinates:

for blue light 0.159; 0.024,

for cyan-colored light 0.079; 0.453,

for green light 0.286; 0.574,

for yellow-orange light 0.543; 0.429, and

for red light 0.680; 0.316.

8. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips for blue and cyan-colored light emit directly from a semiconductor layer sequence, and

wherein the semiconductor chips for green, yellow-orange and red light each comprise at least one phosphor for generating the corresponding light.

9. The optoelectronic semiconductor device according to claim 6 ,

wherein

the exactly one of the semiconductor chips configured to generate blue light is configured to emit directly from a semiconductor layer sequence,

the exactly one of the semiconductor chips configured to generate cyan-colored light comprises (Sr,Ba)Si2O2N2:Eu as phosphor,

the exactly one of the semiconductor chips configured to generate green light comprises NOS:Eu, LuYAG:Ce and/or YAG:Ce as phosphor,

the exactly one of the semiconductor chips configured to generate yellow-orange light comprises (Sr,Ca)AlSiN:Eu mixed with YAG:Ce as phosphor,

the exactly one of the semiconductor chips configured to generate red light comprises (Sr,Ca)AlSiN:Eu as phosphor, and

the phosphors of the semiconductor chips for cyan-colored, green, yellow-orange and red light are each configured for full conversion of a primary radiation.

10. The optoelectronic semiconductor device according to claim 6 ,

wherein for wavelengths of intensity maxima and for half widths of the respective emission spectra of the semiconductor chips applies:

intensity maximum for blue light between 445 nm and 455 nm inclusive and half width between 10 nm and 30 nm inclusive,

intensity maximum for cyan-colored light between 500 nm and 512 nm inclusive and half width between 15 nm and 40 nm inclusive,

intensity maximum for green light between 520 nm and 535 nm inclusive and half width between 35 nm and 90 nm inclusive,

intensity maximum for yellow-orange light between 595 nm and 615 nm inclusive and half width between 50 nm and 100 nm inclusive, and

intensity maximum for red light between 625 nm and 650 nm inclusive and half width between 50 nm and 100 nm inclusive.

11. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips or groups of semiconductor chips are electrically drivable individually for a specific color.

12. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips each exhibit a Lambertian or an approximately Lambertian radiation characteristic.

13. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips on the carrier have a common anode terminal or a common cathode terminal.

14. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips on the carrier each have their own anode terminal and their own cathode terminal.

15. The optoelectronic semiconductor device according to claim 6 ,

wherein the semiconductor chips are separated from each other by a gas-filled or evacuated gap such that there is no external optical shielding between adjacent semiconductor chips.

16. The optoelectronic semiconductor device according to claim 6 ,

wherein each of the semiconductor chips is chipwise associated with its own protection diode against damage by electrostatic discharges.

17. The optoelectronic semiconductor device according to claim 6 ,

wherein semiconductor layer sequences of the semiconductor chips each comprise a plurality of vias through an active zone.