Laser diode chip
A laser diode chip is described, comprising including: an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact, at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.
1. A laser diode chip comprising:
an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,
at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and
at least one metallic seed layer, wherein
the heating element comprises a part of the seed layer,
the p-type contact is arranged on a further part of the seed layer, and
in a longitudinal direction parallel to a longitudinal axis of a waveguide of the laser diode chip, the heating element comprises alternating first regions in which only the seed layer is present and second regions in which an additional metal layer is applied directly to the seed layer, so that the first regions have a higher resistance for a current through the resistance heater than the second regions.
2. The laser diode chip according to claim 1 , wherein the heating element is a conductor track.
3. The laser diode chip according to claim 1 , wherein the laser diode chip is arranged on a heat sink, and wherein the active layer is arranged between the heating element and the heat sink.
4. The laser diode chip according to claim 1 , wherein the heating element and the p-contact comprise the same material.
5. The laser diode chip according to claim 1 , wherein the heating element comprises at least one of the metals gold, titanium, platinum or palladium.
6. The laser diode chip according to claim 1 , wherein the heating element is connected to electrical contacts which are not connected to the p-contact or the n-contact of the laser diode chip.
7. The laser diode chip according to claim 1 ,
wherein the heating element comprises a common contact with the laser diode chip.
8. The laser diode chip according to claim 1 , wherein the heating element is arranged above the p-contact of the laser diode chip, wherein a first passivation layer is arranged between the heating element and the p-contact.
9. The laser diode chip according to claim 1 , wherein the laser diode chip comprises a ridge waveguide, and wherein the heating element is arranged parallel to the ridge waveguide.
10. The laser diode chip according to claim 1 , wherein the p-type semiconductor region is covered in regions with a second passivation layer, and wherein the heating element is arranged on the passivation layer.
11. The laser diode chip according to claim 1 , wherein the heating element comprises a metal layer.
12. The laser diode chip according to claim 1 , wherein a current path through the p-type semiconductor region is formed between the heating element and the p-type contact.
13. The laser diode chip according to claim 1 , wherein the heating element is configured to be connected to a control device configured to control the heating power of the heating element.
14. The laser diode chip according to claim 13 , wherein the control device is configured to control the heating power such that an emission wavelength is within a predetermined tolerance in a target value range.