TRANSMISSION LINE USING NANOSTRUCTURED MATERIAL AND METHOD OF MANUFACTURING THE TRANSMISSION LINE

1 . A transmission line using a nanostructured material, comprising:

a first nanoflon layer formed of nanoflon;

a first insulating layer located above the first nanoflon layer;

a first pattern formed by etching a first conductive layer formed on the first insulating layer; and

a first ground layer located below the first nanoflon layer,

wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.

2 . The transmission line of claim 1 , wherein the first pattern comprises ground lines and a signal line, which are formed by etching the first conductive layer.

3 . The transmission line of claim 1 , further comprising:

a second nanoflon layer located on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching; and

a second ground layer located on the second nanoflon layer.

4 . The transmission line of claim 1 , further comprising:

a second nanoflon layer located on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching;

a second ground layer located on the second nanoflon layer;

a third nanoflon layer located on the second ground layer;

a second insulating layer located on the third nanoflon layer; and

a second pattern formed by etching a second conductive layer formed on the second insulating layer and transmits a signal.

5 . The transmission line of claim 4 , wherein the second pattern comprises ground line and a signal line configured to transmit a signal, which are formed by etching the second conductive layer.

6 . The transmission line of claim 4 , wherein the second insulating layer is a second coating layer formed by coating a top of the third nanoflon layer with an insulating material.

7 . The transmission line of claim 4 , further comprising:

a fourth nanoflon layer located on the second pattern formed on the second insulating layer and the second insulating layer exposed by the etching; and

a third ground layer located on the fourth nanoflon layer.

8 . The transmission line of claim 1 , wherein the first pattern comprises ground lines and a signal line, which are formed by etching the first conductive layer.

9 . The transmission line of claim 1 , wherein the first insulating layer is a first coating layer formed by coating a top of the first nanoflon layer with an insulating material.

10 . The method according to claim 1 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.

11 . The transmission line according to claim 1 , wherein the first to third insulating layers are polyimide (PI), and the conductive layers are copper (Cu).

12 . A method of manufacturing a transmission line using a nanostructured material, the method comprising:

forming a first conductive layer on a first insulating layer;

forming a first pattern, which transmits and receives a signal, by etching the first conductive layer;

locating the first insulating layer above a first nanoflon layer formed of nanoflon; and

locating a first ground layer below the first nanoflon layer,

wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.

13 . The method of claim 12 , wherein the forming of the first pattern comprises forming ground lines and a signal line by etching the first conductive layer.

14 . The method of claim 12 , further comprising:

locating a second nanoflon layer on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching; and

locating a second ground layer on the second nanoflon layer.

15 . The method of claim 2 , further comprising:

locating a second nanoflon layer on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching;

locating a second ground layer on the second nanoflon layer;

locating a third nanoflon layer on the second ground layer;

locating a second insulating layer on the third nanoflon layer;

forming a second conductive layer on the second insulating layer; and

forming a second pattern, which transmits and receives a signal, by etching the second conductive layer.

16 . The method of claim 2 , further comprising:

locating a second nanoflon layer on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching;

locating a second ground layer on the second nanoflon layer;

locating a third nanoflon layer on the second ground layer;

forming a second conductive layer on a second insulating layer;

forming a second pattern, which transmits and receives a signal, by etching the second conductive layer; and

locating the second insulating layer on the third nanoflon layer.

17 . The method according to claim 15 , wherein the forming of the second pattern comprises forming a signal line and ground line by etching the second conductive layer.

18 . The method according to claim 15 , further comprising:

locating a fourth nanoflon layer on the second pattern formed on the second insulating layer and the second insulating layer exposed by the etching; and

bonding a third ground layer to the fourth nanoflon layer.

19 . The method according to claim 12 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape. Page 9 of 10