Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order;

a contact element, and

a doped contact layer, wherein

the active layer generates primary radiation in the intended operation,

the current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer,

the output coupling layer comprises output coupling structures for radiation output on an exit side facing away from the active layer,

the output coupling layer comprises a lower absorption coefficient for the primary radiation than the current spreading layer,

the contact element is configured for injecting first charge carriers into the current spreading layer and comprises a bottom surface adjacent to a semiconductor material of the semiconductor layer sequence,

the doped contact layer is thinner than the current spreading layer and comprises a higher doping than the current spreading layer, and

the doped contact layer is adjacent to the bottom surface of the contact element.

2. The optoelectronic semiconductor chip according to claim 1 ,

wherein the exit side of the output coupling layer comprises a roughness of at least 200 nm.

3. The optoelectronic semiconductor chip according to claim 1 , wherein

the output coupling layer comprises a lower defect density than the current spreading layer and/or

the band gap of the output coupling layer is larger than the energy of the primary radiation.

4. The optoelectronic semiconductor chip according to claim 1 , wherein

the semiconductor layer sequence is based on Al n In 1-n-m Ga m P with 0≤n≤1, 0≤ m≤1 and m+n≤1,

the current spreading layer comprises a larger Ga content than the output coupling layer.

5. The optoelectronic semiconductor chip according to claim 1 ,

wherein the contact layer is arranged on the exit side of the output coupling layer and is adjacent to the exit side.

6. The optoelectronic semiconductor chip according to claim 1 , wherein,

a lateral extent of the contact layer substantially corresponds to the lateral extent of the bottom surface of the contact element,

the lateral extent of the bottom surface is at most 25% of the lateral extent of the active layer.

7. The optoelectronic semiconductor chip according to claim 1 ,

wherein the contact layer is disposed between the current spreading layer and the exit side and is adjacent to the current spreading layer.

8. The optoelectronic semiconductor chip according to claim 1 ,

wherein the bottom surface of the contact element is directly adjacent to the current spreading layer.

9. The optoelectronic semiconductor chip according to claim 1 ,

wherein the output coupling layer comprises a lower doping than the current spreading layer.

10. The optoelectronic semiconductor chip according to claim 1 ,

wherein the output coupling layer is nominally undoped.

11. A method for producing an optoelectronic semiconductor chip comprising:

A) providing a semiconductor layer sequence having a doped contact layer, a less heavily doped output coupling layer and an active layer, which are arranged one above the other in this order, wherein the active layer generates primary radiation in the intended operation;

B) applying a photoresist layer to the side of the contact layer facing away from the active layer, wherein the photoresist layer completely covers the contact layer both in an output coupling section and in a contact section of the semiconductor layer sequence;

C) patterning and partially removing the photoresist layer in the output coupling section;

D) carrying out an etching process with which

etching completely through the contact layer and into the output coupling layer is carried out in the regions of the output coupling section in which the photoresist layer has been removed, thereby forming output coupling structures in the output coupling layer;

the contact layer in the output coupling section is removed,

the photoresist layer is not penetrated in the region of the contact section;

E) removing the photoresist layer in the region of the contact section; and

F) applying a contact element to the contact layer in the region of the contact section.

12. The method according to claim 11 ,

wherein in step D) a first etchant is first used which attacks the material of the photoresist layer and partially or completely removes the photoresist layer in the output coupling section.

13. The method according to claim 12 , wherein

the first etchant attacks the contact layer,

the first etchant is used until the contact layer in the output coupling section is completely removed.

14. The method according to claim 12 , wherein

in step D) a second etchant is used after the first etchant has partially or completely removed the photoresist layer in the region of the output coupling section, wherein

the second etchant attacks the contact layer,

the second etchant is used until the contact layer in the output coupling section is removed.

15. The method according to claim 11 , wherein

the step F) is carried out before the step B) and

in step B) the photoresist layer is applied to the contact element in the region of the contact section.