METHOD OF MANUFACTURING TRANSMISSION LINE USING NANOSTRUCTURE MATERIAL FORMED BY ELECTRO-SPINNING

1 . A method of manufacturing a transmission line using a nanostructured material formed through electrospinning, the method comprising:

locating a first insulating layer above a first nanoflon layer including nanoflon;

forming a first conductive layer above the first insulating layer;

forming a first pattern, which transmits and receives a signal, by etching the first conductive layer; and

locating a first ground layer below the first nanoflon layer,

wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.

2 . A method of manufacturing a transmission line using a nanostructured material formed through electrospinning, the method comprising:

forming a first conductive layer on a first insulating layer;

locating the first insulating layer above a first nanoflon layer including nanoflon;

forming a first pattern, which transmits and receives a signal, by etching the first conductive layer; and

locating a first ground layer below the first nanoflon layer,

wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.

3 . The method according to claim 1 , wherein the forming of the first pattern comprises forming a ground line and a signal line by etching the first conductive layer.

4 . The method according to claim 1 , further comprising:

locating a second nanoflon layer on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching; and

locating a second ground layer on the second nanoflon layer.

5 . The method according to claim 1 , further comprising:

locating a second nanoflon layer on the first pattern formed on the first insulating layer and the first insulating layer exposed by the etching;

locating a second ground layer on the second nanoflon layer;

locating a third nanoflon layer on the second ground layer;

locating a second insulating layer on the third nanoflon layer;

forming a second conductive layer on the second insulating layer; and

forming a second pattern, which transmits and receives a signal, by etching the second conductive layer.

6 . The method of claim 5 , wherein the forming of the second pattern comprises forming a transmission-signal line and a ground terminal by etching the second conductive layer.

7 . The method of claim 5 , further comprising:

locating a fourth nanoflon layer on the second pattern formed on the second insulating layer and the second insulating layer exposed by the etching; and

locating a third ground layer on the fourth nanoflon layer.

8 . The method according to claim 1 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.

9 . The method according to claim 2 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.

10 . The method according to claim 4 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.

11 . The method according to claim 5 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.

12 . The method according to claim 7 , wherein the locating is performed through adhesion using an adhesive tape or an adhesive or using thermal adhesion in which heat is applied to an adhesive tape.