Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component

1. An optoelectronic semiconductor component comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type,

wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element;

a second contact region configured to electrically contact the second semiconductor layer,

wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer,

wherein the second contact region is arranged between patterned regions of the first semiconductor layer,

wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer,

wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and

wherein a concentration of the first and second composition elements varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer; and

a semiconductor connecting layer arranged between the semiconductor contact layer and the second metallic contact layer, the semiconductor connecting layer including two composition elements selected from the group consisting of the first, second and third composition elements, wherein a band gap of a material of the semiconductor connecting layer is smaller than a band gap of the second semiconductor layer.

2. The optoelectronic semiconductor component according to claim 1 , wherein the semiconductor connecting layer includes solely two composition element selected from the group consisting of the first, second and third composition elements.

3. The optoelectronic semiconductor component according to claim 1 , wherein a concentration of a composition element of the semiconductor contact layer decreases in a region from the second semiconductor layer to the second metallic contact layer.

4. The optoelectronic semiconductor component according to claim 1 , wherein the first semiconductor layer includes a plurality of sublayers composed of the same composition elements, and wherein a doping level or a composition ratio of the composition elements differ in at least two sublayers.

5. The optoelectronic semiconductor component according to claim 1 , wherein each composition element of the second semiconductor layer is selected from the group consisting of In, Al, Ga, B and N.

6. A method for producing an optoelectronic semiconductor component, the method comprising:

patterning a first semiconductor layer of a first conductivity type, which is arranged over a second semiconductor layer of a second conductivity type such that the first semiconductor layer is removed from parts of the second semiconductor layer and patterned regions of the first semiconductor layer are formed,

wherein a semiconductor material of the first and second semiconductor layers is a respective compound semiconductor material including a first, a second and a third composition element;

forming a semiconductor contact layer and a second metallic contact layer between the patterned regions of the first semiconductor layer such that a second contact region is formed for electrically contacting the second semiconductor layer,

wherein the semiconductor contact layer is formed between the second metallic contact layer and the second semiconductor layer,

wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements,

wherein a concentration of the first and second composition element varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer, and

wherein the semiconductor contact layer is formed by selective epitaxial growth over exposed regions of the second semiconductor layer, and

forming a semiconductor connecting layer between the semiconductor contact layer and the second metallic contact layer,

wherein the semiconductor connecting layer includes two composition elements selected from the group consisting of the first, second and third composition elements.

7. The method according to claim 6 , wherein a concentration of a composition element of the semiconductor contact layer decreases in a region from the second semiconductor layer to the second metallic contact layer.

8. The method according to claim 6 , further comprising forming a layer stack comprising the first and second semiconductor layers before patterning the first semiconductor layer.

9. An optoelectronic semiconductor component comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type;

a second contact region configured to electrically contact the second semiconductor layer,

wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer,

wherein the second contact region is arranged between patterned regions of the first semiconductor layer,

wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, and

wherein a band gap of a semiconductor material of the semiconductor contact layer decreases from a position on a side of the second semiconductor layer to a position on the side of the second metallic contact layer; and

a semiconductor connecting layer arranged between the semiconductor contact layer and the second metallic contact layer,

wherein the band gap of a material of the semiconductor connecting layer is smaller than a band gap of the second semiconductor layer, and

wherein the band gap of the semiconductor material of the semiconductor contact layer is smaller than the band gap of the semiconductor material of the second semiconductor layer and larger than the band gap of the semiconductor material of the semiconductor connecting layer.