TRANSMISSION LINE USING NANOSTRUCTURED MATERIAL FORMED THROUGH ELECTROSPINNING AND METHOD OF MANUFACTURING THE TRANSMISSION LINE
Disclosed are a transmission line using a nanostructured material and a method of manufacturing the transmission line. The transmission line includes a first nanoflon layer formed of nanoflon, above which a first coating layer formed of an insulating material is formed, and below which a second coating layer formed of an insulating material is formed, a first pattern formed by a first conductive layer formed on the first coating layer, and a first ground layer formed below the second coating layer.
1 . A transmission line using a nanostructured material, comprising:
a first nanoflon layer formed of nanoflon, above which a first coating layer formed of an insulating material is formed, and below which a second coating layer formed of an insulating material is formed;
a first pattern formed by a first conductive layer formed on the first coating layer; and
a first ground layer formed below the second coating layer,
wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.
2 . The transmission line of claim 1 , wherein the first pattern comprises ground lines and a signal line, which are formed by etching the first conductive layer.
3 . The transmission line of claim 1 , further comprising:
a second nanoflon layer located on the first pattern formed on the first coating layer and the first coating layer exposed by the etching and above which a third coating layer formed of an insulating material is provided; and
a second ground layer formed on the third coating layer.
4 . The transmission line of claim 1 , further comprising:
a second nanoflon layer located on the first pattern formed on the first coating layer and the first coating layer exposed by the etching and above which a third coating layer formed of an insulating material is formed;
a second ground layer formed on the third coating layer;
a third nanoflon layer formed on the second ground layer, above which a fourth coating layer formed of an insulating material is provided, and below which a fifth coating layer formed of an insulating material is provided;
a second conductive layer formed on the fourth coating layer; and
a second pattern formed by etching the second conductive layer and configured to transmit a signal.
5 . The transmission line of claim 4 , wherein the second pattern comprises ground lines and a signal line configured to transmit a signal, which are formed by etching the second conductive layer.
6 . The transmission line of claim 4 , further comprising:
a fourth nanoflon layer located on the second pattern formed on the fourth coating layer and the fourth coating layer exposed by the etching and above which a sixth coating layer formed of an insulating material is provided; and
a third ground layer formed on the sixth coating layer.
7 . The transmission line according to claim 4 , wherein the locating is adhesion using an adhesive tape, an adhesive, or thermal adhesion in which heat is applied to an adhesive tape.
8 . The transmission line according to claim 1 , wherein the first to sixth coating layers are polyimide (PI), and the conductive layers are copper (Cu).
9 . A method of manufacturing a transmission line using a nanostructured material formed through electrospinning, the method comprising:
forming a first coating layer and a second coating layer on a top and a bottom of a first nanoflon layer formed of nanoflon, respectively, by coating the top and bottom with an insulating material;
forming a first conductive layer on the first coating layer;
forming a first pattern, which transmits and receives a signal, by etching the first conductive layer; and
forming a first ground layer on the second coating layer,
wherein the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.
10 . The method of claim 9 , wherein the forming of the first pattern comprises forming ground lines and a signal line by etching the first conductive layer.
11 . The method of claim 9 , further comprising:
locating a second nanoflon layer located on the first pattern formed on the first coating layer and the first coating layer exposed by the etching and above which a third coating layer formed of an insulating material is provided; and
forming a second ground layer formed on the third coating layer.
12 . The method of claim 10 , further comprising:
locating a second nanoflon layer located on the first pattern formed on the first coating layer and the first coating layer exposed by the etching and above which a third coating layer formed of an insulating material is provided; and
forming a second ground layer formed on the third coating layer.
13 . The method of claim 12 , further comprising:
forming a fourth coating layer and a fifth coating layer on a top and a bottom of a third nanoflon layer formed of nanoflon, respectively, by coating the top and bottom with an insulating material;
forming the third nanoflon layer on the second ground layer, above which the fourth coating layer is formed and below which the fifth coating layer is formed;
forming a second conductive layer on the fourth coating layer; and
forming a second pattern, which transmits and receives a signal, by etching the second conductive layer.
14 . The method of claim 13 , further comprising:
locating a fourth nanoflon layer, above which a sixth coating layer formed of an insulating material is formed, on the second pattern formed on the fourth coating layer and the fourth coating layer exposed by the etching; and
forming a third ground layer on the fourth nanoflon layer.
15 . The method according to claim 13 , wherein the locating is adhesion using an adhesive tape, an adhesive, or thermal adhesion in which heat is applied to an adhesive tape.