Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component

1. An optoelectronic semiconductor element comprising an optoelectronic semiconductor chip, the optoelectronic semiconductor chip comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type;

a first contact element electrically connected to the first semiconductor layer;

a second contact element electrically connected to the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack, wherein the first semiconductor layer is patterned so that part of the second semiconductor layer is exposed, wherein the first contact element is arranged over the first semiconductor layer, wherein the second contact element is arranged over the first semiconductor layer, and wherein parts of the first contact element are arranged at the same vertical height as parts of the second contact element within an area in which the second contact element overlaps with the first semiconductor layer; and

a conductive layer connected to the second semiconductor layer and to the second contact element with parts of the conductive layer being arranged between the first contact element and the first semiconductor layer.

2. The optoelectronic semiconductor element according to claim 1 , wherein a distance between a first main surface of the first contact element and a first main surface of the first semiconductor layer is identical to the distance between a first main surface of the second contact element and the first main surface of the first semiconductor layer.

3. The optoelectronic semiconductor element according to claim 1 , wherein the first and the second contact elements each have an identical composition.

4. The optoelectronic semiconductor element according to claim 1 , wherein the first and the second contact elements each form a topmost metalization level of the semiconductor chip.

5. The optoelectronic semiconductor element according to claim 1 , wherein intermediate layers arranged between the first contact element and the first semiconductor layer and arranged between the second contact element and the first semiconductor layer are identical.

6. The optoelectronic semiconductor element according to claim 1 , further comprising a first passivation layer arranged between the first semiconductor layer and, in each case, the first and second contact elements.

7. The optoelectronic semiconductor element according to claim 1 , wherein at least 10% of a first main surface of the first contact element is arranged at the same vertical height as a first main surface of the second contact element.

8. The optoelectronic semiconductor element according to claim 1 , further comprising a connecting element arranged between the second contact element and the second semiconductor layer.

9. An optoelectronic device comprising the optoelectronic semiconductor element according to claim 1 .

10. The optoelectronic device according to claim 9 , selected from a display device, a video wall, a motor vehicle headlight, a motor vehicle rear light, a motor vehicle brake light, a motor vehicle direction indicator, or combinations thereof.

11. An optoelectronic semiconductor element comprising an optoelectronic semiconductor chip, the optoelectronic semiconductor chip comprising:

a first semiconductor layer of a first conductivity type,

a second semiconductor layer of a second conductivity type,

a first contact element electrically connected to the first semiconductor layer, and

a second contact element electrically connected to the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack, wherein the first contact element is arranged over the first semiconductor layer, wherein the second contact element is arranged over the first semiconductor layer, and wherein intermediate layers arranged between the first contact element and the first semiconductor layer being identical to intermediate layers arranged between the second contact element and the first semiconductor layer; and

a conductive layer connected to the second semiconductor layer and to the second contact element with parts of the conductive layer being arranged between the first contact element and the first semiconductor layer.

12. The optoelectronic semiconductor element according to claim 11 , wherein a distance between a first main surface of the first contact element and the first main surface of the first semiconductor layer is identical to a distance between a first main surface of the second contact element and the first main surface of the first semiconductor layer.

13. The optoelectronic semiconductor element according to claim 10 , wherein the first and the second contact elements each have an identical composition.

14. The optoelectronic semiconductor element according to claim 11 , wherein the second contact element is electrically connected to the second semiconductor layer via contact openings in the first semiconductor layer.

15. The optoelectronic semiconductor element according to claim 11 , further comprising a carrier on which the optoelectronic semiconductor chip is applied.

16. The optoelectronic semiconductor element according to claim 15 , wherein a second main surface or an approximated second main surface of the second semiconductor layer is parallel to a first main surface of the carrier.