METHOD FOR MANUFACTURING AN ELECTRO-ACOUSTIC RESONATOR AND ELECTRO-ACOUSTIC RESONATOR DEVICE

1 . A method for manufacturing an electro-acoustic resonator, comprising:

providing a workpiece comprising a dielectric layer;

forming a metal electrode on the dielectric layer of the workpiece;

providing a solution containing a salt of a noble metal;

immersing the workpiece having the metal electrode disposed thereon into the solution to deposit a layer of the noble metal on the metal electrode;

forming a piezoelectric layer on the metal electrode.

2 . The method of claim 1 , wherein immersing the workpiece into the solution comprises performing an electro-chemical plating process to deposit the layer of the noble metal on the metal electrode.

3 . The method of claim 1 , wherein providing a workpiece comprises providing a bragg mirror layer stack including a dielectric layer at its surface.

4 . The method of claim 3 , wherein the dielectric layer comprises a layer of silicon oxide or silicon dioxide.

5 . The method of claim 1 , wherein the metal of the metal electrode comprises at least one of tungsten, molybdenum, titanium, aluminum and copper.

6 . The method of claim 1 , wherein the step of forming a metal electrode comprises forming a metal electrode of a metal selected from one of tungsten, molybdenum, titanium, aluminum and a composition of aluminum and copper.

7 . The method of any of claims 1 , wherein the noble metal comprises at least one of platinum, palladium, ruthenium and nickel.

8 . The method of claim 1 , wherein the salt of the noble metal comprises at least one of

sodium hexachloroplatinate (II) or Na 2 PtCl 6 ,

potassium hexachloroplatinate (II) or K 2 PtCl 6 ,

sodium tetrachloropalladate (II) or Na 2 PdCl 4 ,

potassium tetrachloropalladate (II) or K 2 PdCl 4 ,

potassium hexachloropalladate (IV) or K 2 PdCl 6 ,

ruthenium (III) chloride hydrate or RuCl 3 .3H 2 O,

nickel (II) chloride and

nickel (II) sulfate.

9 . The method of claim 1 , wherein the solution further contains hydrazine or another reducing agent.

10 . The method of claim 1 , comprising selectively depositing a layer of the noble metal on the metal electrode and not depositing a layer of the noble metal on the surface of the dielectric layer.

11 . The method of claim 1 , wherein forming a piezoelectric layer comprises forming an aluminum nitride layer or an aluminum scandium nitride layer on the layer of the noble metal.

12 . The method of claim 1 , wherein forming a piezoelectric layer comprises forming an aluminum nitride layer or an aluminum scandium nitride layer on the layer of the noble metal, wherein the aluminum scandium nitride layer comprises more than 5 at-% or more than 10 at-% of scandium or between 10 at-% and 40 at% of scandium.

13 . The method of claim 1 , comprising:

providing a substrate comprising one of a bragg mirror layer stack including a top layer of silicon dioxide and a substrate layer having a top layer of silicon dioxide;

forming a metal layer on the layer of silicon dioxide comprising one of tungsten and molybdenum and stucturing the metal layer to form an electrode;

then applying a platinum salt solution or a palladium salt solution to the substrate;

then forming an aluminum scandium nitride layer having a scandium contents of at least 10 at-% on the electrode layer;

forming another electrode layer on the aluminum scandium nitride layer to form another electrode.

14 . The method of claim 1 , wherein the piezoelectric layer is formed on the metal electrode covered with the layer of noble metal.

15 . An electro-acoustic resonator device, comprising:

a dielectric substrate;

an electrode disposed on the dielectric substrate;

a layer of a noble metal disposed on the electrode;

a layer of a piezoelectric material disposed on the layer of a noble metal.

16 . The electro-acoustic resonator device of claim 15 , wherein

the electrode is disposed on a top side of the dielectric substrate,

the layer of noble metal fully covers a top side of the electrode facing away from the substrate and side surfaces of the electrode running transversely to the top side of the electrode,

regions of the top side of the dielectric substrate are free of the layer of a noble metal.

17 . The electro-acoustic resonator device of claim 15 , comprising:

a silicon dioxide substrate layer;

an electrode layer of one of molybdenum and tungsten disposed on the silicon dioxide substrate layer;

a seed layer of one of platinum and palladium disposed on the electrode layer;

a layer of aluminum scandium nitride disposed on the seed layer, the layer of aluminum scandium nitride comprising at least 10 at-% of scandium.