Sputtering target and method for producing same
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 μm or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.
1 . A cylindrical sputtering target, wherein:
the sputtering target comprises at least a target material;
the target material is formed of one or more metal elements or alloys selected from the group consisting of Ti, Nb, Ta, Co, Ti alloys, Nb alloys, Ta alloys, and Co alloys;
the target material has a crystal grain size of 50 μm or less;
the target material has an oxygen concentration of 1000 ppm by mass or less;
an amount of Cu in the target material is less than 0.01% by mass; and,
the sputtering target comprises no substrate.
2 . The sputtering target according to claim 1 , wherein the crystal grain size is more than 10 μm.
3 . The sputtering target according to claim 1 , wherein the target material is seamless.
4 . A method for producing the sputtering target according to claim 1 , comprising the steps of:
processing a circular pillar shaped billet comprising one or more metal elements into a cylindrical billet; and
subjecting the cylindrical billet to plastic processing.
5 . The method according to claim 4 , wherein the plastic processing comprises forging the cylindrical billet while passing a core rod through the cylindrical billet.
6 . The method according to claim 5 , wherein the forging comprises:
carrying out first forging in a range of from 500° C. to 850° C., and
carrying out second forging in a range of from 250° C. to 600° C.
7 . The sputtering target accordingly to claim 1 , wherein a purity of the target material metal element or alloy is at least 3N (99.9% by mass).
8 . The sputtering target according to claim 7 , wherein a purity of the target material metal element or alloy is 4N (99.99% by mass) or more.
9 . The sputtering target according to claim 7 , wherein a purity of the target material metal element or alloy is 4N5 (99.995% by mass) or more.
10 . The sputtering target according to claim 7 , wherein a purity of the target material metal element or alloy is 5N (99.999% by mass) or more.
11 . The sputtering target according to claim 7 , wherein a purity of the target material metal element or alloy is 5N5 (99.9995% by mass) or more.
12 . A cylindrical sputtering target, wherein:
the sputtering target comprises at least a target material;
the target material is composed of an ingot formed of one or more metal elements or alloys selected from the group consisting of Ti, Nb, Ta, Co, Ti alloys, Nb alloys, Ta alloys, and Co alloys;
the target material has a crystal grain size of 50 μm or less;
the target material has an oxygen concentration of 1000 ppm by mass or less; and,
an amount of Cu in the target material is less than 0.01% by mass.
13 . The sputtering target according to claim 1 , wherein the target material is TiAl or TiNb.
14 . The sputtering target according to claim 12 , wherein the target material is TiAl or TiNb.