IP Library Granted Patent US 12,034,157
Granted Patent B2
US 12,034,157 · App. 17/285,316 · Granted Jul 9, 2024

Sulfur-doped silicon negative electrode material, method for producing same, lithium secondary battery negative electrode including negative electrode material, and lithium secondary battery comprising negative electrode

Inventors: Jangbae Kim (Daejeon, KR); Soojin Park (Pohang-si, KR); Jaegeon Ryu (Pohang-si, KR); Jonghyun Chae (Daejeon, KR); Jihye Yang (Daejeon, KR)
Assignees: LG ENERGY SOLUTION, LTD.; POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
H01M4/386C01B33/023H01M4/134C01P2002/54C01P2002/72C01P2004/03C01P2004/04C01P2006/16C01P2006/40H01M2004/021H01M2004/027H01M10/0525
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Quick Facts
Patent No.
US 12,034,157
App. No.
17/285,316
Granted
Jul 9, 2024
Kind
B2
Abstract

A sulfur-doped silicon negative electrode material, a preparation method for a sulfur-doped silicon negative electrode material, a negative electrode for a lithium secondary battery comprising the sulfur-doped silicon negative electrode material, and a lithium secondary battery comprising the negative electrode, wherein the sulfur-doped silicon negative electrode material has an internal pore channel having an average width of 500 nm to 3 μm and an average external diameter of 1 μm to 5 μm.

Claims (22)

1. A sulfur-doped silicon negative electrode material which has an internal pore channel having an average width of 500 nm to 3 μm and has an average external diameter of 1 μm to 5 μm,

wherein the sulfur-doped silicon negative electrode material consists of silicon and sulfur seeds and has a structure in which silicon and sulfur seeds are agglomerated with each other in a mixed state, and

wherein the sulfur-doped silicon negative electrode material has an electrical conductivity of 1 S/m to 6 S/m.

2. The sulfur-doped silicon negative electrode material according to claim 1 , wherein the internal pore channel has a shape formed by sulfur-doped silicon particles.

3. The sulfur-doped silicon negative electrode material according to claim 1 , wherein the sulfur-doped silicon negative electrode material is a material doped with sulfur, and

wherein the sulfur is doped in an amount of 0.1 at % to 5 at %.

4. The sulfur-doped silicon negative electrode material according to claim 1 , wherein the sulfur-doped silicon negative electrode material has a lithium ion diffusion coefficient of 10 −12 cm 2 /s to 10 −10 cm 2 /s.

5. The sulfur-doped silicon negative electrode material according to claim 1 , wherein the sulfur-doped silicon negative electrode material has a porosity of 4% to 10%.

6. A method for preparing the sulfur-doped silicon negative electrode material of claim 1 comprising the steps of:

(a) preparing a mixture by mixing silica, a metal reducing agent, a metal halide salt, and a sulfate compound; and

(b) performing a reduction reaction on the mixture.

7. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 , wherein in step (a), silica, the metal reducing agent, the metal halide salt, and the sulfate compound are mixed in a weight ratio of 5-14:12-14:62-67:7-19, respectively.

8. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 , wherein in step (b), the reduction reaction is performed by heating the mixture to a temperature in a range of 200° C. to 270° C. under an inert atmosphere.

9. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 , wherein in step (a), the sulfate compound is at least one selected from the group consisting of MgSO 4 , ZnSO 4 , BaSO 4 , Na 2 SO 4 , and NiSO 4 .

10. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 , wherein in step (a), the metal reducing agent is at least one selected from the group consisting of Mg, Al, Ca, and Zn, and the metal halide salt is at least one selected from the group consisting of AlCl 3 , MgCl 2 , and ZnCl 2 .

11. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 , further comprising a step of:

(c) dispersing the mixture in water to remove unreacted metal halide salt and sulfate compound after the reduction reaction of step (b) is completed.

12. The method for preparing the sulfur-doped silicon negative electrode material according to claim 11 , further comprising a step of:

(d) removing the metal reducing agent and residual material by treating the mixture with an aqueous hydrochloric acid solution after performing step (c).

13. The method for preparing the sulfur-doped silicon negative electrode material according to claim 6 further comprising a step of: removing unreacted silica which is carried out using 0.1% to 10% (v/v) hydrofluoric acid after performing step (b).

14. A negative electrode for a lithium secondary battery comprising the sulfur-doped silicon negative electrode material of claim 1 .

15. A lithium secondary battery comprising the negative electrode for the lithium secondary battery of claim 14 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2021
From: LG CHEM, LTD.
To: LG ENERGY SOLUTION, LTD.
Reel/Frame 058037/0422 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2021
From: KIM, JANGBAE; PARK, SOOJIN; RYU, JAEGEON; CHAE, JONGHYUN; YANG, JIHYE
To: LG CHEM, LTD.; POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
Reel/Frame 055934/0205 →