Semiconductor device, semiconductor module, relay unit, battery unit, and vehicle

1. A semiconductor device, comprising:

a first terminal for a battery;

a second terminal for an inverter circuit;

a first switching element; and

a second switching element connected in parallel to the first switching element, wherein

the semiconductor device is configured to control a voltage applied to a control terminal of the first switching element to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal, and

a withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

2. The semiconductor device according to claim 1 , wherein

the first switching element is an insulated gate bipolar transistor (IGBT),

and

the IGBT includes a collector used as the first terminal and an emitter used as the second terminal.

3. The semiconductor device according to claim 2 , wherein the first switching element and the second switching element are provided as separate semiconductor chips.

4. The semiconductor device according to claim 2 , wherein the first switching element and the second switching element are formed on a same semiconductor substrate.

5. The semiconductor device according to claim 2 ,

wherein the second switching element is a metal-oxide-semiconductor field-effect transistor (MOSFET) connected in parallel to the IGBT,

wherein the MOSFET includes a body diode used as a flyback diode.

6. The semiconductor device according to claim 5 , wherein the IGBT and the MOSFET are simultaneously activated and simultaneously deactivated.

7. The semiconductor device according to claim 1 , wherein

the first switching element is an insulated gate bipolar transistor (IGBT), and

the second switching element is a diode connected in antiparallel to the IGBT.

8. The semiconductor device according to claim 1 , wherein

the first switching element is a metal-oxide-semiconductor field-effect transistor (MOSFET), and

the second switching element is a diode connected in antiparallel to the MOSFET.

9. The semiconductor device according to claim 8 , wherein the MOSFET and the diode are provided as separate semiconductor chips.

10. The semiconductor device according to claim 8 , wherein the MOSFET includes a body diode used as a flyback diode.

11. The semiconductor device according to claim 1 , wherein the first switching element is a metal-oxide-semiconductor field-effect transistor (MOSFET) including a body diode used as a flyback diode.

12. A semiconductor module, comprising:

semiconductor devices connected in parallel to each other,

wherein each of the semiconductor devices is the semiconductor device according to claim 1 .

13. A relay unit, comprising:

the semiconductor module according to claim 12 .

14. A relay unit, comprising:

the semiconductor device according to claim 1 .

15. A battery unit, comprising:

the battery; and

the relay unit according to claim 14 .

16. A vehicle, comprising:

the battery unit according to claim 15 ;

the inverter circuit; and

a motor driven by the inverter circuit.

17. A relay unit, comprising:

a positive-side semiconductor device arranged between a positive electrode of the battery and the inverter circuit; and

a negative-side semiconductor device arranged between a negative electrode of the battery and the inverter circuit,

wherein the positive-side semiconductor device is the semiconductor device according to claim 1 .

18. A semiconductor device, comprising:

a positive electrode of a battery;

an insulated gate bipolar transistor (IGBT) arranged between the battery and an inverter circuit electrically connected to the battery; and

a reverse blocking insulated gate bipolar transistor (RB-IGBT) connected in antiparallel to the IGBT.

19. The semiconductor device according to claim 18 , wherein the IGBT and the RB-IGBT are simultaneously activated and simultaneously deactivated.