Thin film saw device
A thin film SAW device comprises a carrier substrate (CA), a TCF compensating layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between piezoelectric layer and TCF compensating layer to further reduce the TCF. The material properties of the functional layer match those of the piezoelectric layer in view of acoustic velocity, density and stiffness such that they do not deviate from each other by more than 10% without having piezoelectric effect. The functional layer my be of the same crystalline constitution as the useful piezoelectric layer but without piezoelectric properties.
1. A thin film SAW device comprising:
a carrier substrate (CA);
a TCF compensating layer (CL);
a piezoelectric layer (PL); and
an IDT electrode (EL) on top of the piezoelectric layer, wherein a functional layer (FL) is arranged between piezoelectric layer and TCF compensating layer; and
wherein material properties of the functional layer match those of the piezoelectric layer in view of acoustic velocity, density and stiffness such that they do not deviate from each other by more than 10% without having piezoelectric effect.
2. The thin film SAW device of claim 1 , wherein the functional layer comprises the same material like the piezoelectric layer does not provide any piezoelectric effect.
3. The thin film SAW device of claim 1 , wherein the piezoelectric layer is a mono-crystalline layer of LT or LN having a thickness dP, wherein the functional layer is a crystalline layer of the same material but without having a piezoelectric effect, and wherein for a thickness dF of the functional layer the following is valid: 0.005 dP<=dF<=0.5 dP.
4. The thin film SAW device of claim 1 , wherein one or more additional layer with higher sound velocity than the TCF compensating layer (CL) are added between the carrier substrate (CA) and the TCF compensating layer (CL).
5. The thin film SAW device of claim 1 , wherein the piezoelectric layer is a monocrystalline layer of lithium tantalite LT of a thickness dP of 400-700 nm, wherein the functional layer is a crystalline LT layer of the same material but without having a piezoelectric effect, and wherein a thickness dF of the functional layer accords to: 2 nm<=dF<=350 nm.
6. The thin film SAW device of claim 1 , wherein the TCF compensating layer (CL) comprises a SiO2 layer having a thickness dC according to: 50 nm<=dC<=500 nm.