PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC DEVICE

1 . A piezoelectric material, comprising:

Al 1-x [(Ag a , Nb b , Sc c ) y ] x N as its main constituent,

wherein:

0.055≤a≤1.33 or 0.001≤a≤0.124;

0.055≤b≤1.33 or 0.001≤b≤0.124;

0≤c;

y=1/(a+b+c); and

0.03≤x≤0.75.

2 . The piezoelectric material of claim 1 , wherein:

0.001≤a≤0.124;

0.001≤b≤0.124; and

0.03≤x≤0.372.

3 . The piezoelectric material of claim 1 , wherein x is selected from 0.03, 0.06, 0.0625, 0.09, 0.12, 0.15, 0.18, 0.21, 0.24, 0.27, 0.30, 0.33, 0.36, 0.39, 0.42, 0.45, 0.48, 0.51, 0.54, 0.57, 0.60, 0.63, 0.66, 0.69, 0.72 and 0.75.

4 . The piezoelectric material of claim 1 , wherein the main constituent is Al 0.875 Ag 0.0625 Nb 0.0625 N.

5 . The piezoelectric material of claim 1 , wherein the main constituent is Al 0.814 Ag 0.062 Nb 0.062 Sc 0.062 N.

6 . The piezoelectric material of claim 1 , wherein in the main constituent at least 25.6 (atomic %), 31.8 (atomic %), 38.0% (atomic %), 44.2 (atomic %), 50.4 (atomic %), 56.6 (atomic %), 62.8 (atomic %), 69.0 (atomic %), 75.2 (atomic %), 81.4 (atomic %), 87.6 (atomic %), 90.8 (atomic %), 93.8 (atomic %), 95.8 (atomic %), 98.0 (atomic %) are Al while the remaining balance is a combination of binary doped AlN piezoelectric material containing Ag (silver) and Nb (niobium).

7 . The piezoelectric material of claim 1 , wherein in the main constituent at least 25.6 (atomic %), 30.25 (atomic %), 34.9% (atomic %), 44.2 (atomic %), 53.5 (atomic %), 62.8 (atomic %), 72.1 (atomic %), 75.4 (atomic %), 81.4 (atomic %), 87.4 (atomic %), 90.7 (atomic %), 93.8 (atomic %), 95.35 (atomic %), 96.28 (atomic %), 96.9 (atomic %) are Al while the remaining balance is a combination of binary doped AlN piezoelectric material containing Ag (silver), Nb (niobium) and Sc (scandium).

8 . The piezoelectric material of claim 1 , wherein the piezoelectric material is part of a piezoelectric.

9 . The piezoelectric material of claim 8 , wherein the piezoelectric device selected from:

an electro acoustic resonator, a SAW resonator, a SAW filter, a solidly mounted reflector,

SMR, BAW resonator, a (SMR-)BAW filter, a guided BAW(GBAW) resonator, a GBAW filter, a film bulk acoustic wave (FBAR) resonator, a FBAR filter,

a device working with Lamb waves, acoustic plate wave (APW), Rayleigh SAW (R-SAW), Sezawa mode waves, shear-horizontal SAWs (SH-SAWs), Love mode waves, pseudo-surface acoustic waves (PSAW) or Leaky SAWs (LSAW),

a multiplexer, a duplexer, a quadplexer, a hexaplexer, a multiplexer based on any of the above types of resonators, a piezoelectric generator, a piezoelectric sensor, a mass sensor, a microfluidic sensor, a piezoelectric transducers, an energy harvester, an ultrasound device, a transducer or transmitter, a piezo (MEMS) microphone or a similar device that utilizes direct or reverse piezoelectric effect in a thin film or bulk ceramic form.