SOLAR CELL
The present invention relates to a method for manufacturing a solar cell, the method comprising the steps of: preparing a substrate; forming an adhesive layer on the substrate; and forming, on the adhesive layer, a perovskite solar cell having a perovskite absorption layer, wherein an optical treatment step of providing light is performed at least once between the step of preparing the substrate and the step of forming the perovskite solar cell.
1 . A method for manufacturing a solar cell, the method comprising steps of:
preparing a substrate;
forming an adhesive layer on the substrate; and
forming, on the adhesive layer, a perovskite solar cell having a perovskite absorption layer,
wherein an optical treatment step of providing light is performed at least once between the step of preparing the substrate and the step of forming the perovskite solar cell.
2 . The method of claim 1 , wherein, in the optical treatment step, a light source of the light is any one selected from a xenon lamp, a halogen lamp, a laser, a plasma lighting system (PLS), and a light emitting diode (LED).
3 . The method of claim 1 , wherein, in the optical treatment step, a distance between a light source and a substrate to which the light source is irradiated is in a range of 485 to 518 mm, and a light amount of the light is in a range of 100 to 800 W/m 2 .
4 . The method of claim 1 , wherein the optical treatment step includes a heat treatment to provide heat.
5 . The method of claim 4 , wherein a temperature at which the heat treatment is performed is in a range of 100 to 300° C., and the optical treatment step and the heat treatment are performed for 5 to 30 minutes.
6 . The method of claim 1 , wherein the optical treatment step is performed after the step of preparing the substrate.
7 . The method of claim 1 , wherein the optical treatment step is performed after the step of forming the adhesive layer.
8 . The method of claims 6 and 7 , wherein a temperature at which the optical treatment step is performed is in a range of 200 to 300° C.
9 . The method of claim 1 , wherein the optical treatment step is performed after the step of forming the perovskite solar cell.
10 . The method of claim 9 , wherein a temperature at which the optical treatment step is performed is in a range of 100 to 150° C., and a time duration in which the optical treatment step is performed is 5 to 10 minutes.
11 . The method of claim 1 , wherein the optical treatment step comprises a first optical treatment step and a second optical treatment step,
wherein the first optical treatment step is performed after the step of preparing the substrate or the step of forming the adhesive layer on the substrate, and the second optical treatment step is performed after the step of forming the perovskite solar cell, and
wherein an accumulated amount of energy applied in the first optical treatment step is larger than an accumulated amount of energy applied in the second optical treatment step.
12 . The method of claim 1 , wherein the substrate is at least one selected from glass, polyimide (PI), polyethylene naphthalate (PEN), and polyethylene terephthalate (PET).
13 . The method of claim 1 , wherein the substrate includes a photoelectric transducer including an amorphous semiconductor layer.
14 . The method of claim 13 , wherein the photoelectric transducer comprises:
a semiconductor substrate;
a first conductive type semiconductor layer disposed on a front surface of the semiconductor substrate; and
a second conductive type semiconductor layer disposed on a rear surface of the semiconductor substrate.
15 . The method of claim 14 , wherein at least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer is formed of at least one selected from an amorphous semiconductor layer, an amorphous silicon carbide layer, an amorphous silicon nitride layer, or an amorphous silicon oxide layer.
16 . The method of claim 14 , wherein a tunneling film is disposed on the front surface and the rear surface of the semiconductor substrate, and
wherein the tunneling film is implemented as at least one selected from an i-type amorphous semiconductor layer, an amorphous silicon carbide layer, an amorphous silicon nitride layer, or an amorphous silicon oxide layer.
17 . The method of claim 14 , wherein, a rear surface of the second conductive type semiconductor layer is provided with:
a first electrode layer containing a transparent conductive oxide; and
a second electrode layer containing metal, sequentially disposed thereon.
18 . The method of claim 1 , wherein the adhesive layer is formed of at least one selected from a transparent conductive oxide, a carbonaceous conductive material, a metallic material, and a conductive polymer material.
19 . The method of claim 18 , wherein a thickness of the adhesive layer is in a range of 20 to 40 nm.
20 . The method of claim 1 , wherein the step of forming the perovskite solar cell comprises steps of:
forming an electron transport layer disposed on a front surface of the adhesive layer;
forming a perovskite absorption layer disposed on a front surface of the electron transport layer; and
forming a hole transport layer disposed on a front surface of the perovskite absorption layer.
21 . The method of claim 20 , wherein a front surface of the perovskite solar cell is provided with:
a third electrode layer containing a transparent conductive oxide; and
a fourth electrode layer containing metal, sequentially disposed thereon.
22 . The method of claim 20 , wherein the perovskite absorption layer includes at least one of organic halide perovskite and metal halide perovskite.
23 . A solar cell manufactured by a method for manufacturing a solar cell of any one of claims 1 to 22 .