Electromagnetic shielding structure for a semiconductor device and a method for manufacturing the same
View Patent ↗A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.
1. A semiconductor device, comprising:
a substrate;
an inductance structure; and
a shielding structure arranged to at least partially shield the inductance structure from external electromagnetic (EM) fields,
wherein the shielding structure comprises a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure, and
wherein at least one of the inductance structure and the shielding structure is at least partially within the substrate.
2. The semiconductor device of claim 1 , wherein the shielding structure portion is arranged such that the shielding structure is around an entire perimeter of the inductance structure.
3. The semiconductor device of claim 1 , wherein the shielding structure comprises another shielding structure portion arranged above the inductance structure.
4. The semiconductor device of claim 1 , wherein the shielding structure comprises another shielding structure portion below the inductance structure.
5. The semiconductor device of claim 1 , wherein the semiconductor device further comprises at least one other inductance structure, and wherein the shielding structure is arranged to at least partially shield the at least one other inductance structure from the external EM fields.
6. The semiconductor device of claim 1 , wherein the shielding structure is connected to a ground to dissipate an electric charge on the shielding structure.
7. The semiconductor device of claim 1 , wherein the shielding structure is connected to a reverse voltage source to neutralize an electric charge on the shielding structure.
8. The semiconductor device of claim 1 , wherein the shielding structure comprises another shielding structure portion that is between the semiconductor device and another semiconductor device.
9. A semiconductor device, comprising:
a substrate;
an inductance structure; and
a shielding structure arranged to at least partially shield the inductance structure from external electromagnetic (EM) fields,
wherein the shielding structure comprises:
a first shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure, and
a second shielding structure portion comprising openings through which a connective structure is arranged, and
wherein at least one of the inductance structure and the shielding structure is at least partially within the substrate.
10. The semiconductor device of claim 9 , wherein the shielding structure portion is arranged such that the shielding structure is around an entire perimeter of the inductance structure.
11. The semiconductor device of claim 9 , wherein the shielding structure comprises another shielding structure portion arranged above the inductance structure.
12. The semiconductor device of claim 9 , wherein the shielding structure comprises another shielding structure portion below the inductance structure.
13. The semiconductor device of claim 9 , wherein the semiconductor device further comprises at least one other inductance structure, and wherein the shielding structure is arranged to at least partially shield the at least one other inductance structure from the external EM fields.
14. The semiconductor device of claim 9 , wherein the shielding structure is connected to a ground to dissipate an electric charge on the shielding structure.
15. A semiconductor device, comprising:
a substrate;
an inductance structure; and
a shielding structure comprising a single portion that is arranged along a side of the inductance structure to shield the inductance structure from external electromagnetic (EM) fields,
wherein at least one of the inductance structure and the shielding structure is at least partially within the substrate.
16. The semiconductor device of claim 15 , wherein the single portion is arranged such that the shielding structure is around an entire perimeter of the inductance structure.
17. The semiconductor device of claim 15 , wherein the shielding structure comprises another shielding structure portion arranged above the inductance structure.
18. The semiconductor device of claim 15 , wherein the shielding structure comprises another shielding structure portion below the inductance structure.