Light-emitting devices with improved light outcoupling
Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain.
1. An optoelectronic device comprising:
an active region; and
a multilayered encapsulation stack disposed over the active region, the multilayered encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises inorganic particles dispersed in a polymeric matrix and has a higher index of refraction than the first domain.
2. The optoelectronic device of claim 1 , wherein the optoelectronic device is an organic light-emitting diode device and the active region comprises a light-emitting pixel.
3. The optoelectronic device of claim 2 , wherein the light-emitting pixel is aligned with one of the sub-domains.
4. The optoelectronic device of claim 1 , wherein the multilayered encapsulation stack further comprises a plurality of inorganic barrier layers between the composite film and the active region.
5. The optoelectronic device of claim 4 , wherein the composite film is adjacent to a top inorganic barrier layer of the plurality of inorganic barrier layers, the first domain has a first refractive index, the top inorganic barrier layer has a second refractive index, and the first refractive index is the same as the second refractive index.
6. The optoelectronic device of claim 4 , wherein each inorganic particle comprises silicon nitride, silicon oxide, or silicon oxynitride.
7. The optoelectronic device of claim 1 , wherein each sub-domain has a cylindrical or conical shape.
8. The optoelectronic device of claim 1 , wherein the polymeric matrix is an acrylic matrix.
9. The optoelectronic device of claim 1 , further comprising a plurality of active regions including the active region, wherein each active region is aligned with one of the sub-domains.
10. The optoelectronic device of claim 1 , wherein the sub-domains are dome-shaped.
11. An optoelectronic device comprising:
a plurality of light-emitting pixels; and
a multilayered encapsulation stack disposed over the light-emitting pixels, the multilayered encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, each sub-domain aligned with a pixel of the plurality of light-emitting pixels, wherein the second domain comprises oxide, nitride, or oxynitride inorganic particles dispersed in a polymeric matrix and has a higher index of refraction than the first domain.
12. The optoelectronic device of claim 11 , wherein the sub-domains are localized in clusters over the pixels.
13. The optoelectronic device of claim 11 , wherein the multilayered encapsulation stack further comprises a plurality of inorganic barrier layers.
14. The optoelectronic device of claim 13 , wherein the composite film is between two of the inorganic barrier layers.
15. The optoelectronic device of claim 13 , wherein a refractive index of the sub-domains and a refractive index of the inorganic barrier layers differ by no more than 15%.
16. The optoelectronic device of claim 11 , wherein each sub-domain has a cylindrical or conical shape.
17. The optoelectronic device of claim 11 , wherein the polymeric matrix is an acrylic matrix.
18. The optoelectronic device of claim 11 , wherein each sub-domain is dome-shaped.
19. The optoelectronic device of claim 11 , wherein the first domain comprises a first polymer and the second domain comprises a second polymer different from the first polymer.
20. The optoelectronic device of claim 11 , wherein the composite film is a planarizing film.