Ion trap apparatus with integrated switching apparatus

1. An ion trap chip comprising:

a surface ion trap chip having a plurality of electrodes,

a plurality of interconnect layers;

a substrate; and

at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate, the integrated switching network layer comprising a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes.

2. The ion trap chip of claim 1 , wherein ion trap chip is configured to operate within a cryogenic chamber.

3. The ion trap chip of claim 1 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise one or more of bipolar junction transistors, metal-oxide-semiconductor field effect transistors, metal-semiconductor field-effect transistors, junction gate field-effect transistors, heterojunction bipolar transistors, high-electron-mobility transistors, field-effect transistors and through-silicon-via field effect transistors and through-silicon-capacitors.

4. The ion trap chip of claim 3 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise through-silicon-via field effect transistors configured as through-silicon-capacitors.

5. The ion trap chip of claim 3 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise through-silicon-via field effect transistors configured as one or more of voltage-out-of-range switches and disconnect switches.

6. The ion trap chip of claim 1 , wherein the plurality of monolithically-integrated controls and/or switches comprises at least one optically driven switch.

7. An ion trap apparatus comprising:

an ion trap chip having a plurality of electrodes;

an interposer chip coupled to the ion trap chip; and

at least one integrated switching network layer, the integrated switching network layer comprising a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes,

wherein the interposer chip defines at least a first portion of the at least one integrated switching network layer.

8. The ion trap apparatus of claim 7 , wherein the ion trap chip comprises a surface ion trap chip.

9. The ion trap apparatus of claim 7 , wherein the ion trap apparatus is configured to operate within a cryogenic chamber.

10. The ion trap apparatus of claim 7 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise one or more of bipolar junction transistors, metal-oxide-semiconductor field effect transistors, metal-semiconductor field-effect transistors, junction gate field-effect transistors, heterojunction bipolar transistors, high-electron-mobility transistors, field-effect transistors, through-silicon-via field effect transistors and through-silicon-capacitors.

11. The ion trap apparatus of claim 10 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise through-silicon-via field effect transistors configured as through-silicon-capacitors.

12. The ion trap apparatus of claim 10 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise through-silicon-via field effect transistors configured as one or more of voltage-out-of-range switches and disconnect switches.

13. The ion trap apparatus of claim 7 , wherein the plurality of monolithically-integrated controls and/or switches comprises at least one optically driven switch.

14. The ion trap apparatus of claim 7 , further comprising an integrated switching network chip coupled and/or connected to the ion trap chip and interposer chip assembly, the integrated switching network chip comprising at least a second portion of the at least one integrated switching network layer.

15. An ion trap apparatus comprising:

an ion trap chip having a plurality of electrodes;

an interposer chip assembly coupled to the ion trap chip;

at least one integrated switching network layer coupled to the ion trap chip and interposer chip assembly; and

an integrated switching network chip coupled and/or connected to the ion trap chip and interposer chip assembly, consisting of the at least one integrated switching network layer which comprises a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes.

16. The ion trap apparatus of claim 15 , wherein the integrated switching network chip is coupled to the ion trap and interposer chip assembly via one or more of bonding, fastening, attachment or co-fabrication.

17. The ion trap apparatus of claim 15 , wherein the integrated switching network chip is connected to the ion trap and interposer chip assembly via an interconnect.

18. The ion trap apparatus of claim 15 , wherein the ion trap chip comprises a surface ion trap chip.

19. The ion trap apparatus of claim 15 , wherein the ion trap apparatus is configured to operate within a cryogenic chamber.

20. The ion trap apparatus of claim 15 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise one or more of bipolar junction transistors, metal-oxide-semiconductor field effect transistors, metal-semiconductor field-effect transistors, junction gate field-effect transistors, heterojunction bipolar transistors, high-electron-mobility transistors, field-effect transistors, through-silicon-via field effect transistors and through-silicon-capacitors.

21. The ion trap apparatus of claim 20 , wherein at least some of the plurality of monolithically-integrated controls and/or switches comprise through-silicon-via field effect transistors configured as through-silicon-capacitors.

22. The ion trap apparatus of claim 15 , wherein the plurality of monolithically-integrated controls and/or switches comprises at least one optically driven switch.