Methods for on-die memory termination and memory devices and systems employing the same
Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication. The device may transmit, from the first portion, a signal instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The signal may be provided at an ODT I/O terminal of the first portion coupled to an ODT I/O terminal of the second portion.
1. A method of operating a memory system, comprising:
receiving, at a first portion of a memory system, a first command instructing the first portion of the memory system to perform a first communication with a memory host;
transmitting, from the first portion of the memory system to a second portion of the memory system, a signal instructing the second portion to enter an on-die termination mode, wherein the signal does not cause a command decoder of the second portion of the memory system to consume power by decoding the signal; and
entering, based at least in part on the signal, the on-die termination mode with the second portion.
2. The method of claim 1 , wherein a voltage of the signal indicates an impedance level of the on-die termination mode.
3. The method of claim 1 , wherein a duration of the signal indicates an impedance level of the on-die termination mode.
4. The method of claim 1 , wherein the second portion exits the on-die termination mode after the first communication is performed.
5. The method of claim 1 , wherein the transmitting of the signal occurs on a first on-die termination terminal of the first portion electrically connected to a second on-die termination terminal of the second portion.
6. The method of claim 5 , wherein the second on-die termination terminal is directly electrically coupled to on-die termination circuitry of the second portion of the memory devices without the command decoder intermediated therebetween.
7. The method of claim 1 , wherein the first command includes a first indication on a first chip select terminal of the first memory device that the first portion is targeted by the first command.
8. The method of claim 1 , wherein the first command does not include a second indication on a second chip select terminal of the second memory device that the second portion is not targeted by the first command.
9. The method of claim 1 , wherein the first communication is one of a read or a write operation.
10. A memory system, comprising:
a first memory device including a first on-die termination terminal; and
a second memory device including a second on-die termination terminal electrically coupled to the first on-die termination terminal;
wherein the second memory device includes circuitry configured to:
receive a signal from the first memory device at the second on-die termination terminal instructing the second memory device to enter an on-die termination mode, wherein the signal does not cause a command decoder of the second portion of the memory system to consume power by decoding the signal, and
enter, based at least in part on receiving the signal, the on-die termination mode with the second portion.
11. The memory system of claim 10 , wherein a voltage of the signal indicates an impedance level of the on-die termination mode.
12. The memory system of claim 10 , wherein a duration of the signal indicates an impedance level of the on-die termination mode.
13. The memory system of claim 10 , wherein the first and second on-die termination terminal are input/output terminals.
14. The memory system of claim 10 , wherein a single semiconductor die comprises the first memory device and the second memory device.
15. The memory system of claim 10 , wherein a first semiconductor die comprises the first memory device, and a second semiconductor die comprises the second memory device.
16. The memory system of claim 10 , wherein the second on-die termination terminal is directly electrically coupled to on-die termination circuitry of the second portion of the memory devices without the command decoder intermediated therebetween.
17. The memory system of claim 10 , wherein:
the command decoder of the second portion of the memory system is in a no-power, low-power, or signal-disconnected state; and
the signal does not cause the command decoder to wake from the no-power, low-power, or signal-disconnected state.
18. A method of operating a memory system, comprising:
receiving a signal from a first memory device at an on-die termination terminal of a second memory device instructing the second memory device to enter an on-die termination mode, wherein the signal does not cause a command decoder of the second memory device to consume power by decoding the signal, and
entering, based at least in part on receiving the signal, the on-die termination mode with the second memory device.
19. The method of claim 18 , wherein a voltage of the signal indicates an impedance level of the on-die termination mode.
20. The method of claim 18 , wherein a duration of the signal indicates an impedance level of the on-die termination mode.