Hermetic coating of components

1. A process for producing an electrical medical implant, comprising:

providing an electrical feedthrough comprising a substrate, an electrical component, and a contact element;

arranging a conduit element within the substrate and extending from a first side of the substrate to an opposite second side of the substrate; and

coating the electrical component with a parylene layer and an Al 2 O 3 layer;

wherein the conduit element comprises a cermet; and

wherein the produced implant is configured to be implanted in the human body without a housing.

2. The process according to claim 1 , wherein the coating of the electrical component is done with aerosol deposition or CVD.

3. The process according to claim 1 , wherein the coating of the electrical component is done with a Gorham process.

4. The process according to claim 1 , wherein the coating takes place below a temperature of 100° C.

5. The process according to claim 1 , wherein the coating takes place at approximately 25° C.

6. The process according to claim 1 , wherein the coating takes place in an atmosphere with a pressure of at least 10 Pa.

7. The process according to claim 1 , wherein the substrate comprises a ceramic material.

8. An electrical medical implant, comprising:

an electrical feedthrough, which comprises a substrate;

a conduit element, which is arranged within the substrate and extends from a first side of the substrate to an opposite second side of the substrate, wherein the conduit element comprises a cermet;

an electrical component; and

a contact element, wherein the electrical component is arranged on the first side of the substrate and is coated with a parylene layer and an Al 2 O 3 layer;

wherein the implant is configured to be implanted in the human body without a housing.

9. The implant according to claim 8 , wherein the electrical component is connected to the substrate directly or only via a printed circuit board.

10. The implant according to claim 8 , comprising the conduit element, which is arranged essentially completely within the substrate and extends from the first side of the substrate to an opposite second side of the substrate, wherein the electrical component is connected to the conduit element directly or only via a printed circuit board.

11. The implant according to of claim 8 , wherein the layer has a helium leak rate of less than 1×10 −9 mbar*L/s.

12. The implant according to claim 8 , wherein the layer has a thickness of approximately 1 μm to 50 μm.

13. The implant according to claim 8 , wherein the layer has a thickness of approximately 1 μm to 10 μm.

14. The implant according to claim 8 , wherein, after the coating, the contact element is accessible for a direct electrical contacting.