Light-emitting device with a plurality of electrodes on a semiconductor stack
A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
1. A light-emitting device, including:
a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate;
a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer;
a first electrode pad formed adjacent to a first edge of the light-emitting device; and
a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall connected to the top surface of the substrate and separated from the first side surface of the substrate by a second distance, the first semiconductor layer adjacent to the second edge includes a second sidewall connected to the top surface of the substrate and separated from the second side surface of the substrate by a first distance, and the second distance is smaller than the first distance.
2. The light-emitting device according to claim 1 , wherein a first angle is between the first sidewall of the first semiconductor layer and the top surface of the substrate, a second angle is between the second sidewall of the first semiconductor layer and the top surface of the substrate, and the second angle is different from the first angle.
3. The light-emitting device according to claim 2 , wherein the first angle is larger than the second angle.
4. The light-emitting device according to claim 3 , wherein the first angle is between 70 degrees and 90 degrees.
5. The light-emitting device according to claim 3 , wherein the second angle is between 20 degrees and 70 degrees.
6. The light-emitting device according to claim 1 , further including an insulating layer formed on the semiconductor stack, wherein the first sidewall of the first semiconductor layer is covered by the insulating layer, and the second sidewall of the first semiconductor layer is covered by the insulating layer.
7. The light-emitting device according to claim 6 , wherein the insulating layer includes a first side surface of the insulating layer directly connected to the first side surface of the substrate, and a second side surface of the insulating layer directly connected to the second side surface of the substrate.
8. The light-emitting device according to claim 1 , wherein the first distance is larger than 5 μm and less than 50 μm.
9. The light-emitting device according to claim 8 , wherein the first distance is less than 30 μm.
10. The light-emitting device according to claim 1 , wherein in the top view of the light-emitting device, the semiconductor stack adjacent to the first edge includes a plurality of convex parts.
11. A light-emitting device, including:
a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate;
a first light-emitting element and a second light-emitting element formed on the substrate, wherein each of the first light-emitting element and the second light-emitting element comprises a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer;
a first electrode pad formed adjacent to a first edge of the light-emitting device; and
a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer of the first light-emitting element adjacent to the first edge includes a first sidewall connected to the top surface of the substrate and spaced apart from the first side surface of the substrate by a second distance, the first semiconductor layer of the second light-emitting element adjacent to the second edge includes a second sidewall connected to the top surface of the substrate and spaced apart from the second side surface of the substrate by a first distance, and the second distance is less than the first distance.
12. The light-emitting device according to claim 11 , wherein a first angle is between the first sidewall of the first semiconductor layer of the first light-emitting element and the top surface of the substrate, a second angle is between the second sidewall of the first semiconductor layer of the second light-emitting element and the top surface of the substrate, and the second angle is different from the first angle.
13. The light-emitting device according to claim 12 , wherein the first angle is larger than the second angle.
14. The light-emitting device according to claim 13 , wherein the first angle is between 70 degrees and 90 degrees.
15. The light-emitting device according to claim 13 , wherein the second angle is between 20 degrees and 70 degrees.
16. The light-emitting device according to claim 11 , further including an insulating layer formed on the semiconductor stack, wherein the first sidewall of the first semiconductor layer is covered by the insulating layer, and the second sidewall of the first semiconductor layer is covered by the insulating layer.
17. The light-emitting device according to claim 16 , wherein the insulating layer includes a first side surface of the insulating layer directly connected to the first side surface of the substrate, and a second side surface of the insulating layer directly connected to the second side surface of the substrate.
18. The light-emitting device according to claim 11 , wherein the first distance is larger than 5 μm and less than 50 μm.
19. The light-emitting device according to claim 18 , wherein the first distance is less than 30 μm.
20. The light-emitting device according to claim 11 , wherein in the top view of the light-emitting device, the semiconductor stack of the first light-emitting element or the semiconductor stack of the second light-emitting element includes a plurality of convex parts.