Detection device and display device
According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.
1. A detection device comprising:
an insulating substrate;
a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light;
a first switching element that is provided for each photoelectric conversion element and comprises a first semiconductor, a source electrode, and a drain electrode;
an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate; and
a planarizing film that covers the first switching element, wherein
the inorganic insulating layer comprises a first inorganic insulating layer and a second inorganic insulating layer, and
the first inorganic insulating layer is provided between the planarizing film and the photoelectric conversion element in the normal direction of the insulating substrate.
2. The detection device according to claim 1 , wherein the second inorganic insulating layer is provided between the planarizing film and the first switching element in the normal direction of the insulating substrate.
3. The detection device according to claim 2 , wherein
the source electrode and the drain electrode are provided above the first semiconductor with an interlayer insulating layer interposed between the source and drain electrodes and the first semiconductor, and each of the source electrode and the drain electrode is electrically coupled to the first semiconductor through a contact hole provided in the interlayer insulating layer, and
the inorganic insulating layer covers the source electrode and the drain electrode.
4. The detection device according to claim 1 , further comprising:
a plurality of gate lines coupled to the first switching elements and extending in a first direction; and
a gate line drive circuit that comprises a second switching element comprising a second semiconductor, is provided in a peripheral area outside the detection area, and is configured to drive the gate lines, wherein
the inorganic insulating layer is provided over an area overlapping the second switching element.
5. The detection device according to claim 4 , wherein
the first semiconductor is an oxide semiconductor, and
the second semiconductor is of polysilicon.
6. The detection device according to claim 1 , wherein
the source electrode and the drain electrode are provided above the first semiconductor with an interlayer insulating layer interposed between the source and drain electrodes and the first semiconductor, and each of the source electrode and the drain electrode is electrically coupled to the first semiconductor through a contact hole provided in the interlayer insulating layer, and
the second inorganic insulating layer covers the source electrode and the drain electrode.
7. The detection device according to claim 1 , wherein
the first switching element comprises a first gate electrode and a second gate electrode provided with the first semiconductor interposed therebetween in the normal direction of the insulating substrate,
the detection device further comprises:
a plurality of gate lines coupled to the first switching elements and extending in a first direction; and
a plurality of signal lines coupled to the first switching elements and intersecting the first direction, and
the first gate electrode is electrically coupled to the second gate electrode in an area surrounded by the gate lines and the signal lines.
8. A display device comprising:
the detection device according to claim 1 ; and
a display panel that comprises display elements to display an image and is disposed so as to face the detection device.
9. The detection device according to claim 1 , wherein
the photoelectric conversion elements further includes a lower electrode, and
the first inorganic insulating layer is disposed between the lower electrode and the planarizing film in the normal direction of the insulating substrate.