Hydrogen-passivated topological materials, devices, and methods
View Patent ↗A topological material includes a lattice crystalline structure; and a material defect in the lattice crystalline structure that is treatable by hydrogen passivation that chemically mitigates an electronic charge associated with the material defect. The lattice crystalline structure includes dangling bonds in an atomic arrangement of the material defect of the lattice crystalline structure, and the hydrogen passivation may apply hydrogen to chemically passivate the dangling bonds of the material defect. The hydrogen passivation may be achieved by diffusing hydrogen into common materials of the lattice crystalline structure. The hydrogen passivation may chemically and/or electrostatically neutralize an electronic activity associated with the material defect.
1. An electronic device comprising:
a topological material containing a lattice crystalline structure and having a topologically non-trivial electronic band structure; and
a material defect in the lattice crystalline structure that is treatable by hydrogen passivation that chemically and/or electrostatically neutralizes an electronic activity associated with the material defect
and further comprising a comprising a magnetic layer on the topological material.
2. The electronic device of claim 1 , wherein the topological material comprises 2D or 3D topological insulators, Weyl semimetals, Dirac semimetals, Chern insulators, topological Kondo insulators, or a combination thereof.
3. The electronic device of claim 1 , wherein the topological material is integratable onto substrates comprising any of silicon, III-V semiconductors, and II-VI semiconductors.
4. The electronic device of claim 1 , wherein the hydrogen passivation optimizes spin-polarized electronic transport of the topological material.
5. A method of performing hydrogen passivation during fabrication of an electronic device containing a topological material, the method comprising:
providing the topological material containing a lattice crystalline structure;
identifying a material defect in the lattice crystalline structure; and
applying a hydrogen passivation to the material defect to mitigate an electronic charge associated with the material defect, and
further comprising depositing a layer of magnetic material on the topological material.
6. The method of claim 5 , wherein the hydrogen passivation is achieved by diffusing hydrogen into common materials of the lattice crystalline structure.
7. The method of claim 5 , wherein the hydrogen passivation creates a chemical reaction with electronic charge centers in the material defect to chemically neutralize an electronic activity associated with the material defect.
8. The method of claim 5 , wherein the hydrogen passivation comprises applying high-energy ultraviolet light to the topological material, and wherein the high-energy ultraviolet light diffuses into the topological material and causes defects to be passivated.
9. The method of claim 5 , wherein the hydrogen passivation comprises applying hydrogen gas to the material defect.
10. The method of claim 5 , wherein the hydrogen passivation comprises performing thermal cracking of the diatomic hydrogen, by a heated incandescent filament, to atomic hydrogen which diffuses into the crystal lattice of the topological material and passivates unwanted defects.
11. The method of claim 10 , comprising heating the incandescent filament to greater than 2200 K.
12. The method of claim 5 , comprising diffusing atomic hydrogen through the magnetic material during an annealing process performed on the topological material during fabrication of the electronic device.
13. The method of claim 5 , comprising growing the topological material in a thin film deposition tool without breaking vacuum prior to performing the hydrogen passivation.
14. The method of claim 5 , comprising performing the hydrogen passivation after full device fabrication is complete.