Light-emitting element and manufacturing method thereof

1. A method of manufacturing a light-emitting element, comprising:

providing a substrate, wherein the substrate comprises a top surface with a first area and a second area;

introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer comprises a first crystal quality and the second layer comprises a second crystal quality, the first crystal quality is different from the second crystal quality; and

dicing the substrate along the second area.

2. The method of claim 1 , further comprising forming a patterned mask layer on the second area.

3. The method of claim 2 , wherein the patterned mask layer has a width of 10 μm to 100 μm.

4. The method of claim 2 , wherein the patterned mask layer has a height of 1 μm to 3 μm.

5. The method of claim 2 , wherein the second layer is formed on the patterned mask layer.

6. The method of claim 1 , wherein the second layer comprises a first non-single crystal semiconductor layer.

7. The method of claim 6 , further comprising forming a non-single crystal semiconductor stack on the first non-single crystal semiconductor layer.

8. The method of claim 7 , further comprising removing the non-single crystal semiconductor stack before dicing the substrate.

9. The method of claim 7 , further comprising:

forming a patterned mask layer on the second area;

forming the first non-single crystal semiconductor layer and the non-single crystal semiconductor stack on the patterned mask layer; and

removing the patterned mask layer before dicing the substrate.

10. The method of claim 7 , wherein the first layer comprises a buffer structure on the first area.

11. The method of claim 10 , wherein the buffer structure comprises Al X2 Ga (1-X2) N, and wherein X2≥0.8.

12. The method of claim 10 , further comprising forming a first semiconductor layer, a light-emitting stack and a second semiconductor layer on the buffer structure.

13. The method of claim 12 , further comprising:

removing portions of the second semiconductor layer and the light-emitting stack to form a platform exposing a portion of the first semiconductor layer;

forming a first contact layer on the platform to electrically connect to the first semiconductor layer; and

forming a second contact layer on the second semiconductor layer.

14. The method of claim 12 , wherein the first semiconductor layer comprises Al X1 Ga (1-X1) N, wherein X1≥10.6.

15. The method of claim 12 , wherein the first semiconductor layer comprises Al X1 Ga (1-X1) N and the buffer structure comprises Al X2 Ga (1-X2) N, and wherein X2>X1.

16. The method of claim 12 , wherein the first semiconductor layer comprises a first region and a second region surrounding the first region and closer to the second area than the first region; and wherein the first region comprises a first thickness, and the second region comprises a second thickness larger than the first thickness.

17. The method of claim 1 , wherein the second area is a dicing street, and the step of dicing the substrate comprises dicing the substrate along the dicing street.

18. The method of claim 1 , wherein in a top view, the second area surrounds the first area.

19. The method of claim 1 , wherein the first crystal quality is better than the second crystal quality.

20. The method of claim 12 , wherein one of the first semiconductor layer and the second semiconductor layer comprises a single crystal structure.