Vertical cavity surface emitting laser with integrated photodiode

1. A vertical cavity surface emitting laser (VCSEL) comprising:

an optical resonator comprising a first mirror, an active region configured to generate laser light, and a second mirror, wherein the active region is arranged between the first mirror and the second mirror;

a photodiode integrated in the optical resonator, the photodiode comprising an absorption region having a plurality of absorbing layers configured to absorb the generated laser light, wherein the absorbing layers are arranged spaced apart from one another by a center-to-center distance d which satisfies the condition d=(2k−1)λ/(4 m), wherein λ is the wavelength of the laser light in the absorption region, and k and m are natural numbers ≥1, wherein at least one first layer comprising AlGaAs or GaAs, at least one second layer comprising AlGaAs or GaAs, and at least one third layer comprising GaAsP sandwiched between the first layer and the second layer are arranged between at least one adjacent pair of the absorbing layers.

2. The VCSEL of claim 1 , wherein the photodiode comprises an even number of the absorbing layers.

3. The VCSEL of claim 1 , wherein the photodiode comprises at least two of the absorbing layers arranged spaced apart from one another by the center-to-center distance d, wherein k=1 and m=1.

4. The VCSEL of claim 1 , wherein the photodiode comprises at least two of the absorbing layers arranged spaced apart from one another by the center-to-center distance d, wherein k=2 and m=1.

5. The VCSEL of claim 1 , wherein the photodiode comprises at least four of the absorbing layers pairwise spaced apart from one another by the center-to-center distance d, wherein k=1 and m=2.

6. The VCSEL of claim 1 , wherein the absorbing layers comprise strained semiconductor material.

7. The VCSEL of claim 6 , wherein each of the absorbing layers has a layer thickness which is in a range from 25% to 200% of a critical layer thickness of the strained semiconductor layer.

8. The VCSEL of claim 6 , wherein each of the absorbing layers has the layer thickness which is in the range from 70% to 100% of the critical layer thickness of the strained semiconductor layer.

9. The VCSEL of claim 1 , wherein each of the absorbing layers has a layer thickness in a range from 5 nm to 50 nm.

10. The VCSEL of claim 1 , wherein the absorbing layers comprise InGaAs.

11. The VCSEL of claim 1 , wherein an emission wavelength of laser light configured to be output by the VCSEL is in a range from 850 nm to 1200 nm.

12. An optical sensor comprising the VCSEL according to claim 1 .

13. The VCSEL of claim 1 , wherein each of the absorbing layers has the layer thickness in the range from 10 nm to 35 nm.

14. A method of producing a vertical cavity surface emitting laser (VCSEL), the method comprising:

providing an optical resonator comprising a first mirror, an active region configured to generate laser light, and a second mirror, wherein the active region is arranged between the first mirror and the second mirror;

integrating a photodiode in the optical resonator, the photodiode comprising an absorption region having at least two absorbing layers, arranging the absorbing layers spaced apart from one another by a center-to center distance d which satisfies the condition d=(2k−1)λ/(4 m), wherein λ is the wavelength of laser light in the absorption region, and k and m are natural numbers ≥1, and arranging at least one first layer, at least one second layer, and at least one third layer between at least one adjacent pair of absorbing layers, wherein the first layer comprises AlGaAs or GaAs, the second layer comprises AlGaAs or GaAs, and the third layer comprises GaAsP and is sandwiched between the first layer and the second layer.