Multilayer encapsulation, method for encapsulating and optoelectronic component
A multilayer encapsulation, a method for encapsulating and an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a first electrode layer, an organic light-emitting layer stack abutting the first electrode layer, a second electrode layer abutting the light-emitting layer stack and a multilayer encapsulation abutting the second electrode layer, wherein the multilayer encapsulation comprises a barrier layer and a planarization layer, wherein the planarization layer abuts the second electrode layer, and wherein the planarization layer is arranged between the second electrode layer and the barrier layer.
1. An optoelectronic component comprising: a first electrode layer; an organic light-emitting layer stack abutting the first electrode layer; a second electrode layer abutting the light-emitting layer stack; and a multilayer encapsulation abutting the second electrode layer, wherein the multilayer encapsulation comprises a barrier layer and a planarization layer, wherein the planarization layer directly abuts the second electrode layer, wherein the planarization layer is arranged between the second electrode layer and the barrier layer; and wherein the barrier layer is formed using plasma enhanced chemical vapor deposition (PECVD).
2. The optoelectronic component according to claim 1 , wherein the barrier layer contains inorganic material selected from a group comprising SiN, SiO 2 , SiC or combinations thereof.
3. The optoelectronic component according to claim 1 , wherein the planarization layer is formed by inkjet printing.
4. The optoelectronic component according to claim 1 , wherein the planarization layer has a root mean square roughness of <200 nm.
5. The optoelectronic component according to claim 1 , wherein the encapsulation is flexible.
6. The optoelectronic component according to claim 1 , wherein the barrier layer surrounds lateral edges of the planarization layer.
7. The optoelectronic component according to claim 1 , further comprising a protective layer on the barrier layer.
8. An optoelectronic component comprising:
a first electrode layer;
an organic light-emitting layer stack abutting the first electrode layer;
a second electrode layer abutting the light-emitting layer stack; and
a multilayer encapsulation abutting the second electrode layer,
wherein the multilayer encapsulation comprises a barrier layer and a planarization layer,
wherein the planarization layer abuts the second electrode layer,
wherein the planarization layer is arranged between the second electrode layer and the barrier layer;
wherein the barrier layer surrounds lateral edges of the planarization layer; and
wherein the optoelectronic component further comprises a protective layer on the barrier layer.
9. The optoelectronic component according to claim 8 , wherein the planarization layer has a smaller area parallel to its main direction of extension than the barrier layer.
10. The optoelectronic component according to claim 8 , wherein the planarization layer has a common interface with the barrier layer at the lateral edges.
11. The optoelectronic component according to claim 8 , wherein the planarization layer has a thickness being selected from a range including 50 nm up to and including 1.2 μm.
12. The optoelectronic component according to claim 8 , wherein the protective layer is an organic protective layer or a varnish on which laminated plastic or metal foils are applied.
13. The optoelectronic component according to claim 8 , wherein the barrier layer is formed using plasma enhanced chemical vapor deposition (PECVD).
14. The optoelectronic component according to claim 8 , wherein the barrier layer contains inorganic material selected from a group comprising SiN, SiO 2 , SiC or combinations thereof.
15. The optoelectronic component according to claim 8 , wherein the planarization layer is formed by inkjet printing.