Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×10 20 cm −3 or more, and the concentration of the hydrogen element is 1×10 19 cm −3 or more.
1. A group III nitride crystal,
wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element and has an electrical resistivity of 1 mΩ·cm or less,
the concentration of the N-type dopant is 1×10 20 cm −3 or more, and
the concentration of the hydrogen element is 1×10 10 cm −3 or more.
2. The group III nitride crystal according to claim 1 , wherein the concentration of the N-type dopant is 7×10 20 cm −3 or more and 5×10 21 cm −3 or less.
3. The group III nitride crystal according to claim 1 , wherein the N-type dopant contains at least one selected from the group consisting of a silicon element, a germanium element, and an oxygen element.
4. The group III nitride crystal according to claim 3 , wherein the N-type dopant contains the oxygen element.
5. The group III nitride crystal according to claim 1 , wherein a light having an energy achieving an absorption coefficient of 60 cm −1 or less exists within a range less than a band gap energy value of the group III nitride crystal.
6. The group III nitride crystal according to claim 1 , wherein a light having an energy achieving an absorption coefficient of the group III nitride crystal of 60 cm −1 or less exists within a range less than 3.39 eV.
7. A group III nitride substrate including the group III nitride crystal according to claim 1 .
8. The group III nitride substrate according to claim 7 , wherein the group III nitride substrate has a thickness of 100 μm or more.