Semiconductor storage device and method of manufacturing the same
A semiconductor storage device includes a logic circuit formed on a substrate, a first area formed on the logic circuit and has a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction, a plurality of memory pillars MP which extend in the first area in the first direction, a second area which is formed on the logic circuit and has the plurality of first insulating layers 33 and a plurality of second insulating layers alternately stacked in the first direction, and a contact plug CP 1 which extends in the second area in the first direction and is connected to the logic circuit.
1. A semiconductor storage device comprising:
a logic circuit provided on a substrate;
a first stacked body provided above the logic circuit and including a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction;
a plurality of memory pillars extending in the first stacked body in the first direction;
a second stacked body provided above the logic circuit and including the plurality of first insulating layers and a plurality of second insulating layers alternately stacked in the first direction;
a contact plug extending in the second stacked body in the first direction and connected to the logic circuit, the contact plug electrically isolated from the plurality of conductive layers;
a first slit provided between the first stacked body and the second stacked body, and extending in the first direction and a second direction intersecting the first direction; and
a second slit extending through the first stacked body in the first direction and a second direction intersecting with the first direction to isolate the conductive layers to separate the first stacked body in a third direction intersecting with the first direction and the second direction;
wherein an upper end of the first slit is shifted from an upper end of the second slit along the first direction.
2. The semiconductor storage device according to claim 1 ,
wherein the upper end of the first slit is lower than the upper end of the second slit.
3. The semiconductor storage device according to claim 1 , wherein the first slit has a plurality of pillar bodies continuously arranged in the second direction, and each of the pillar bodies extends in the first direction.
4. The semiconductor storage device according to claim 1 , wherein the first slit includes at least one of a silicon oxide layer or an aluminum oxide layer.
5. The semiconductor storage device according to claim 1 , wherein the first slit includes a film having a material the same as a material of one of the plurality of memory pillars.
6. The semiconductor storage device according to claim 1 , wherein the first insulating layers includes silicon oxide layers, and the second insulating layers includes silicon nitride layers.
7. The semiconductor storage device according to claim 1 , wherein the first slit has a plate shape extending in a second direction intersecting with the first direction.
8. A semiconductor storage device comprising:
a logic circuit provided on a substrate;
a first stacked body provided above the logic circuit and including a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction;
a plurality of memory pillars extending in the first stacked body in the first direction;
a second stacked body provided above the logic circuit and including the plurality of first insulating layers and a plurality of second insulating layers alternately stacked in the first direction;
a bit line provided above the first stacked body and the second stacked body and extending in a second direction;
a contact plug which extends in the second stacked body in the first direction and couples the logic circuit to the bit line;
a first slit provided between the first stacked body and the second stacked body, and extending in the first direction and a second direction intersecting the first direction; and
a second slit extending through the first stacked body in the first direction and a second direction intersecting with the first direction to isolate the conductive layers to separate the first stacked body in a third direction intersecting with the first direction and the second direction;
wherein an upper end of the first slit is shifted from an upper end of the second slit along the first direction.
9. The semiconductor storage device according to claim 8 ,
wherein the upper end of the first slit is lower than the upper end of the second slit.
10. The semiconductor storage device according to claim 8 , wherein the first slit has a plurality of pillar bodies continuously arranged in the second direction, and each of the pillar bodies extends in the first direction.
11. The semiconductor storage device according to claim 8 , wherein the first slit includes at least one of a silicon oxide layer or an aluminum oxide layer.
12. The semiconductor storage device according to claim 8 , wherein the first slit includes a film having a material the same as a material of one of the plurality of memory pillars.
13. The semiconductor storage device according to claim 8 , wherein the first insulating layers includes silicon oxide layers, and the second insulating layers includes silicon nitride layers.
14. The semiconductor storage device according to claim 8 , wherein the first slit has a plate shape extending in a second direction intersecting with the first direction.