IP Library Granted Patent US 11,552,049
Granted Patent B2
US 11,552,049 · App. 17/357,212 · Granted Jan 10, 2023

Embedded power device module, processor substrate and electronic system

Inventor: Danny Clavette (Greene, RI)
Assignee: Infineon Technologies Austria AG
H01L25/03H02M3/003H05K1/056H05K1/162H05K1/165H05K1/188H05K2201/0221
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Quick Facts
Patent No.
US 11,552,049
App. No.
17/357,212
Granted
Jan 10, 2023
Kind
B2
Abstract

A processor substrate includes: an electrically insulating material having a first main side and a second main side opposite the first main side; a plurality of electrically conductive structures embedded in the electrically insulating material and configured to provide an electrical interface at the first main side of the electrically insulating material and to provide electrical connections from the electrical interface to the second main side of the electrically insulating material; and a power device module embedded in the electrically insulating material and configured to convert a voltage provided at the second main side of the electrically insulating material and which exceeds a voltage limit of the processor substrate to a voltage that is below the voltage limit of the processor substrate. An electronic system that includes the processor substrate is also described.

Claims (31)

1. An electronic system, comprising:

a board;

a power converter attached to the board and configured to convert an input voltage applied to the board to an intermediate voltage; and

a processor attached to a substrate,

wherein the substrate is attached to the board or seated in a socket attached to the board,

wherein the substrate comprises:

an electrically insulating material;

an electrical interface configured to electrically connect the substrate to the processor; and

a power device module embedded in the electrically insulating material and configured to convert the intermediate voltage at a main side of the substrate to a voltage that is within an operating range of the processor and below a voltage limit of the substrate.

2. The electronic system of claim 1 , wherein the electrically insulating material of the substrate is an organic material.

3. The electronic system of claim 1 , wherein the power device module comprises at least one power switch embedded in the electrically insulating material.

4. The electronic system of claim 3 , wherein the power device module further comprises a driver circuit embedded in the electrically insulating material and configured to drive the at least one power switch.

5. The electronic system of claim 4 , wherein the power device module further comprises a controller embedded in the electrically insulating material and configured to control the driver circuit so as to implement a power converter or a voltage regulator configured to convert the intermediate voltage to a voltage that is within the operating range of the processor and below the voltage limit of the substrate.

6. The electronic system of claim 5 , wherein the voltage regulator is a multi-phase voltage regulator, and wherein a pair of power switches coupled in a half-bridge configuration is embedded in the electrically insulating material for each phase of the multi-phase voltage regulator.

7. The electronic system of claim 6 , wherein the power device module further comprises one or more capacitors and/or an inductor embedded in the electrically insulating material for each phase of the multi-phase voltage regulator.

8. The electronic system of claim 7 , wherein the inductor for each phase of the multi-phase voltage regulator is a separate winding wound on a common core.

9. The electronic system of claim 4 , wherein the processor is configured to control the driver circuit of the power device module so as to implement a power converter or a voltage regulator.

10. The electronic system of claim 9 , wherein the electrical interface of the substrate includes a first connection configured to receive a switching control signal from the processor for controlling the driver circuit included in the power device module, and one or more second connections configured to provide telemetry data from the power device module to the processor.

11. The electronic system of claim 1 , wherein the power device module is vertically aligned with the processer, and wherein a primary current path between the board, the socket, the substrate and the processor is a vertical path which includes the power device module.

12. A processor substrate, comprising:

an electrically insulating material having a first main side and a second main side opposite the first main side;

a plurality of electrically conductive structures embedded in the electrically insulating material and configured to provide an electrical interface at the first main side of the electrically insulating material and to provide electrical connections from the electrical interface to the second main side of the electrically insulating material; and

a power device module embedded in the electrically insulating material and configured to convert a voltage provided at the second main side of the electrically insulating material and which exceeds a voltage limit of the processor substrate to a voltage that is below the voltage limit of the processor substrate.

13. The processor substrate of claim 12 , wherein the electrically insulating material is an organic material.

14. The processor substrate of claim 12 , wherein the power device module comprises at least one power switch embedded in the electrically insulating material.

15. The processor substrate of claim 14 , wherein the power device module further comprises a driver circuit embedded in the electrically insulating material and configured to drive the at least one power switch.

16. The processor substrate of claim 15 , wherein the power device module further comprises a controller embedded in the electrically insulating material and configured to control the driver circuit so as to implement a power converter or a voltage regulator.

17. The processor substrate of claim 16 , wherein the voltage regulator is a multi-phase voltage regulator, and wherein a pair of power switches coupled in a half-bridge configuration is embedded in the electrically insulating material for each phase of the multi-phase voltage regulator.

18. The processor substrate of claim 17 , wherein the power device module further comprises one or more capacitors and an inductor for each phase of the multi-phase voltage regulator embedded in the electrically insulating material.

19. The processor substrate of claim 15 , wherein the electrical interface includes a first connection configured to receive a switching control signal from the processor for controlling the driver circuit included in the power device module, and one or more second connections configured to provide telemetry data from the power device module to the processor.

20. The processor substrate of claim 12 , wherein the electrically insulating material comprises a first layer in which the power device module is embedded and at least one additional layer formed on the first layer, wherein the power device module has at least one contact configured to receive the voltage provided at the second main side of the electrically insulating material, and wherein the plurality of electrically conductive structures embedded in the electrically insulating material includes distribution circuitry configured to carry the voltage provided by the power device module to the first main side of the electrically insulating material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2021
From: INFINEON TECHNOLOGIES AMERICAS CORP.
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 057777/0049 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2021
From: CLAVETTE, DANNY
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 056658/0132 →
Continuity (2)
Continuation 16655303 · Oct 17, 2019
Related Publication 20210321519A1 · Oct 14, 2021