Multiple-switch types hybrid PEBB power converter
A multi-switch types hybrid power electronics build block (MST HPEBB) least replaceable unit converter employs a first low voltage side (for example, 1000 volt power switches) and a second high voltage side (for example, 3000 volt power switches). The MST HPEBB LRU employs multiple bridge converters connected in series and/or in parallel, and coupled in part by a 1:1 transformer. To reduce weight and volume requirements compared to known PEBB LRUs, different power switch types are employed in different bridge converters. For example, in one exemplary embodiment, low voltage 1.7 kVolt SiC MOSFETS may be employed on the lower voltage side, while at least some 4.5 kVolt Silicon IGBTs may be employed on the high voltage side.
1. A multi-switch type hybrid power electronics building block least replaceable unit (MST HPEBB LRU) comprising:
a first end comprising a low-voltage power stage for power transmission at a first voltage, the low-voltage power stage comprising a low-voltage bridge converter, the low-voltage bridge converter comprising a plurality of low-voltage switches of a first fundamental type of switching device which is configured to carry the first voltage;
a second end comprising a high-voltage power stage for power transmission at a second voltage which is higher than the first voltage, the high-voltage power stage comprising a high-voltage power bridge, wherein:
the high-voltage power bridge comprises a plurality of high-voltage switches of a second fundamental type of switching device which is different than the first fundamental type of switching device and comprises (i) a first half-bridge converter being coupled in parallel with a second half-bridge converter; and (ii) a half-bridge converter being coupled in parallel with a full-bridge converter, the half-bridge converter being configured for at least one of boosting voltage and bucking voltage, and the full-bridge converter being configured for coupling with a high-voltage load;
wherein the high-voltage power bridge is configured to carry the second voltage; and
wherein the first end and the second end are voltage coupled and galvanically isolated via a 1:1 transformer.
2. The MST HPEBB LRU of claim 1 , wherein:
the low-voltage bridge converter comprises a first fundamental switching device for switching a low voltage while maximizing a power density of the MST HPEBB LRU; and
the high-voltage bridge converter comprises a second fundamental switching device for boosting the first voltage to the second voltage, wherein a voltage buck or boost of the MST HPEBB LRU is provided via the high-voltage bridge converter.
3. The MST HPEBB LRU of claim 1 , wherein:
the plurality of low-voltage switches comprise a plurality of Silicon Carbide (SiC) MOSFET switches; and
the plurality of high-voltage switches comprise at least one of:
a plurality of Silicon (Si) IGBT switches,
a plurality of integrated gate-commutated thyristor switches,
and a plurality of injection-enhanced gate transistor switches.
4. The MST HPEBB LRU of claim 3 , wherein:
the plurality of SiC MOSFET switches are rated at 2 kVolt or less, and the plurality of Si IGBT switches rated at 3 kVolt or greater.
5. The MST HPEBB LRU of claim 4 , wherein:
the plurality of low-voltage switches comprise a plurality of 1.7 kVolt switches and the plurality of high-voltage switches comprise a plurality of 4.5 kVolt switches.
6. The MST HPEBB LRU of claim 1 , wherein:
the 1:1 transformer comprises a transformer with an amorphous core.
7. The MST HPEBB LRU of claim 1 , wherein:
the first end comprises a first low-voltage bridge converter coupled in parallel with a second low-voltage bridge converter, the first low-voltage bridge converter also having a power port for connection with a low-voltage power resource;
the second end comprises a third low-voltage bridge converter coupled in parallel with the high-voltage bridge converter, the high-voltage bridge converter also having a power port for connection with a high-voltage power resource;
the 1:1 transformer couples the second low-voltage bridge converter with the third low-voltage bridge converter; and
each respective low-voltage bridge converter comprises one respective fundamental type of switching device of the first and second fundamental types of switching devices.
8. The MST HPEBB LRU of claim 1 , wherein:
the MST HPEBB LRU is configured with a respective full-bridge converter, at each respective end of the MST HPEBB LRU, and
the MST HPEBB LRU is configured for field-adaptation for any of DC-to-DC power conversion, DC-to-AC power conversion, AC-to-DC power conversion, and AC-to-AC power conversion.
9. The MST HPEBB LRU of claim 1 , wherein:
the MST HPEBB LRU comprises a respective full-bridge converter at each respective end of the MST HPEBB LRU, and
the MST HPEBB LRU is configurable for field-adaptation for any of DC-to-DC power conversion, DC-to-AC power conversion, AC-to-DC power conversion, and AC-to-AC power conversion.
10. The MST HPEBB LRU of claim 1 , wherein:
the MST HPEBB LRU comprises a respective half-bridge converter, at each respective end of the MST HPEBB LRU, and
the MST HPEBB LRU is configurable for field-adaptation for either of buck conversion or boost conversation.
11. A Multi-Device Type Hybrid Power Electronics Building Block (MST HPEBB) comprising:
a first voltage phase module which comprises a plurality of multi-switch types power electronic building block line replacement units (MST HPEBB LRUs) connected in series, wherein the MST HPEBB further comprises:
(i) a plurality of low-voltage bridge converters each comprising a plurality of low-voltage switches of a first fundamental type of switching device which are configured to carry a first voltage; and
(ii) a plurality of high-voltage bridge converters each comprising a plurality of high-voltage switches of a second fundamental type of switching device, the second fundamental type of switching device comprising (i) a first half-bridge converter being coupled in parallel with a second half-bridge converter; and (ii) a half-bridge converter being coupled in parallel with a full-bridge converter, the half-bridge converter being configured for at least one of boosting voltage and bucking voltage, and the full-bridge converter being configured for coupling with a high-voltage load;
wherein the plurality of high-voltage switches is configured to carry a second voltage which is greater than the first voltage.
12. The MST HPEBB of claim 11 , wherein:
the plurality of low-voltage switches comprises a plurality of SiC MOSFET switches rated at 2 kVolt or less, and the plurality of high-voltage switches comprises a plurality of SI IGBT switches rated at 3 kVolt or greater.
13. The MST HPEBB of claim 11 , wherein:
the MST HPEBB is field-adaptable for any of DC-to-DC power conversion, DC-to-AC power conversion, AC-to-DC power conversion, and AC-to-AC power conversion.