Blue electroluminescent device, display panel and display device
View Patent ↗A blue electroluminescent device includes: an anode, a light-emitting layer and a cathode stacked in sequence; wherein the light-emitting layer comprises a first type host material, a second type host material, and a guest doped material, one of the first type host material and the second type host material is a P-type material, and the other of the first type host material and the second type host material is an N-type material. A display panel and a display device are further provided.
1. A blue electroluminescent device comprising: an anode, a light-emitting layer and a cathode stacked in sequence;
wherein the light-emitting layer comprises a first type host material, a second type host material, and a guest doped material, one of the first type host material and the second type host material is a P-type material, and the other of the first type host material and the second type host material is an N-type material;
wherein the P-type material comprises at least one of
2. The blue electroluminescent device according to claim 1 , wherein a Lowest Unoccupied Molecular Orbital (LUMO) energy level of the N-type material is not less than 2.1 eV and not greater than 3.3 eV; a Highest Occupied Molecular Orbital (HOMO) energy level of the P-type material is not less than 5.5 eV and not more than 6.5 eV; a difference between the HOMO energy level of the P-type material and the LUMO energy level of the N-type material is not less than 2.6 eV.
3. The blue electroluminescent device according to claim 1 , wherein a mole ratio of the P-type material to the N-type material ranges from 1:4 to 4:1.
4. The blue electroluminescent device according to claim 1 , wherein a hole mobility of the P-type material ranges from 10 −8 cm 2 /(V·s) to 10 −4 cm 2 /(V·s), and an electron mobility of the N-type material ranges from 10 −8 cm 2 /(V·s) to 10 −4 cm 2 /(V·s).
5. A blue electroluminescent device comprising: an anode, a light-emitting layer and a cathode stacked in sequence;
wherein the light-emitting layer comprises a first type host material, a second type host material, and a guest doped material, one of the first type host material and the second type host material is a P-type material, and the other of the first type host material and the second type host material is an N-type material, wherein the N-type material comprises at least one of
6. The blue electroluminescent device according to claim 1 , wherein the cathode is formed of Mg and Ag, a mole ratio of Mg to Ag ranges from 1:9 to 9:1, and a thickness of the cathode ranges from 10 nm to 100 nm.
7. A blue electroluminescent device comprising: an anode, a light-emitting layer and a cathode stacked in sequence;
wherein the light-emitting layer comprises a first type host material, a second type host material, and a guest doped material, one of the first type host material and the second type host material is a P-type material, and the other of the first type host material and the second type host material is an N-type material, further comprising:
a hole transport layer, disposed between the anode and the light-emitting layer;
a hole injection layer, disposed between the anode and the hole transport layer;
an electron blocking layer, disposed between the hole transport layer and the light-emitting layer;
an electron transport layer, disposed between the cathode and the light-emitting layer;
an electron injection layer, disposed between the cathode and the electron transport layer; and
a hole blocking layer, disposed between the electron transport layer and the light-emitting layer;
wherein a difference between an absolute value of a HOMO energy level of the P-type material and an absolute value of a HOMO energy level of the electron blocking layer is not greater than 0.3 eV; and
a difference between an absolute value of a LUMO energy level of the hole blocking layer and an absolute value of a LUMO energy level of the N-type material is not more than 0.3 eV.
8. The blue electroluminescent device according to claim 7 , wherein a thickness of the hole injection layer ranges from 8 nm to 12 nm, a thickness of the hole transport layer ranges from 100 nm to 120 nm, and a thickness of the electron blocking layer ranges from 3 nm to 7 nm, a thickness of the light-emitting layer ranges from 15 nm to 25 nm, a thickness of the hole blocking layer ranges from 3 nm to 7 nm, a thickness of the electron transport layer ranges from 25 nm to 35 nm, and a thickness of the electron injection layer ranges from 1 nm to 2 nm.
9. The blue electroluminescent device according to claim 1 , further comprising:
a hole transport layer, disposed between the anode and the light-emitting layer;
a hole injection layer, disposed between the anode and the hole transport layer;
an electron blocking layer, disposed between the hole transport layer and the light-emitting layer;
an electron transport layer, disposed between the cathode and the light-emitting layer;
an electron injection layer, disposed between the cathode and the electron transport layer; and
a hole blocking layer, disposed between the electron transport layer and the light-emitting layer.
10. The blue electroluminescent device according to claim 9 , wherein a difference between an absolute value of a HOMO energy level of the P-type material and an absolute value of a HOMO energy level of the electron blocking layer is not greater than 0.3 eV; and
a difference between an absolute value of a LUMO energy level of the hole blocking layer and an absolute value of a LUMO energy level of the N-type material is not more than 0.3 eV.
11. The blue electroluminescent device according to claim 9 , wherein a thickness of the hole injection layer ranges from 8 nm to 12 nm, a thickness of the hole transport layer ranges from 100 nm to 120 nm, and a thickness of the electron blocking layer ranges from 3 nm to 7 nm, a thickness of the light-emitting layer ranges from 15 nm to 25 nm, a thickness of the hole blocking layer ranges from 3 nm to 7 nm, a thickness of the electron transport layer ranges from 25 nm to 35 nm, and a thickness of the electron injection layer ranges from 1 nm to 2 nm.
12. The blue electroluminescent device of claim 5 , further comprising:
a hole transport layer, disposed between the anode and the light-emitting layer;
a hole injection layer, disposed between the anode and the hole transport layer;
an electron blocking layer, disposed between the hole transport layer and the light-emitting layer;
an electron transport layer, disposed between the cathode and the light-emitting layer;
an electron injection layer, disposed between the cathode and the electron transport layer; and
a hole blocking layer, disposed between the electron transport layer and the light-emitting layer.
13. The blue electroluminescent device according to claim 12 , wherein a difference between an absolute value of a HOMO energy level of the P-type material and an absolute value of a HOMO energy level of the electron blocking layer is not greater than 0.3 eV; and
a difference between an absolute value of a LUMO energy level of the hole blocking layer and an absolute value of a LUMO energy level of the N-type material is not more than 0.3 eV.
14. The blue electroluminescent device according to claim 12 , wherein a thickness of the hole injection layer ranges from 8 nm to 12 nm, a thickness of the hole transport layer ranges from 100 nm to 120 nm, and a thickness of the electron blocking layer ranges from 3 nm to 7 nm, a thickness of the light-emitting layer ranges from 15 nm to 25 nm, a thickness of the hole blocking layer ranges from 3 nm to 7 nm, a thickness of the electron transport layer ranges from 25 nm to 35 nm, and a thickness of the electron injection layer ranges from 1 nm to 2 nm.
15. The blue electroluminescent device of claim 6 , further comprising:
a hole transport layer, disposed between the anode and the light-emitting layer;
a hole injection layer, disposed between the anode and the hole transport layer;
an electron blocking layer, disposed between the hole transport layer and the light-emitting layer;
an electron transport layer, disposed between the cathode and the light-emitting layer;
an electron injection layer, disposed between the cathode and the electron transport layer; and
a hole blocking layer, disposed between the electron transport layer and the light-emitting layer.
16. The blue electroluminescent device according to claim 15 , wherein a difference between an absolute value of a HOMO energy level of the P-type material and an absolute value of a HOMO energy level of the electron blocking layer is not greater than 0.3 eV; and
a difference between an absolute value of a LUMO energy level of the hole blocking layer and an absolute value of a LUMO energy level of the N-type material is not more than 0.3 eV.
17. A display panel comprising the blue electroluminescent device according to claim 1 .
18. The blue electroluminescent device according to claim 1 , wherein the guest doped material comprise
19. The blue electroluminescent device according to claim 5 , wherein the guest doped material comprise
20. The blue electroluminescent device according to claim 7 , wherein the guest doped material comprise