Methods for error count reporting with scaled error count information, and memory devices employing the same
An apparatus comprising a memory array including a plurality of memory cells arranged in a plurality of columns and a plurality of rows is provided. The apparatus further comprises circuitry configured to perform an error detection operation on the memory array to determine a raw count of detected errors, to compare the raw count of detected errors to a threshold value to determine an over-threshold amount, to scale the over-threshold amount according to a scaling algorithm to determine a scaled error count, and to store the scaled error count in a user-accessible storage location.
1. An apparatus, comprising:
a memory array including a plurality of memory cells arranged in a plurality of columns and a plurality of rows; and
circuitry configured to:
perform an error detection operation on the memory array to determine a raw count of detected errors,
scale the raw count with either a with either a logarithmic scale or a linear scale to determine a logarithmically or linearly scaled error count, and
store the logarithmically or linearly scaled error count in a user-accessible storage location.
2. The apparatus of claim 1 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of the plurality of rows and determines the raw count of detected errors based on a number of the plurality of rows that include at least one bit error.
3. The apparatus of claim 1 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of a plurality of code words stored in the memory array and determines the raw count of detected errors based on a total number of code word errors detected during the error detection operation.
4. The apparatus of claim 1 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of the plurality of rows and determines the raw count of detected errors based on one of the plurality of rows that generated a largest number of errors.
5. The apparatus of claim 1 , wherein the user-accessible storage location comprises a mode register of the apparatus.
6. The apparatus of claim 1 , wherein the memory array is a DRAM array.
7. A method comprising:
performing an error detection operation on a memory array to determine a raw count of detected errors;
scaling the raw count with either a with either a logarithmic scale or a linear scale to determine a logarithmically or linearly scaled error count; and
storing the logarithmically or linearly scaled error count in a user-accessible storage location.
8. The method of claim 7 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of a plurality of rows and determines the raw count of detected errors based on a number of the plurality of rows that include at least one bit error.
9. The method of claim 7 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of a plurality of code words stored in the memory array and determines the raw count of detected errors based on a total number of code word errors detected during the error detection operation.
10. The method of claim 7 , wherein the error detection operation comprises an error check and scrub (ECS) operation that reads data from each of a plurality of rows and determines the raw count of detected errors based on one of the plurality of rows that generated a largest number of errors.
11. An apparatus, comprising:
a memory array comprising a plurality of memory cells arranged in a plurality of columns and a plurality of rows; and
circuitry configured to:
perform an error detection operation on the memory array to determine a raw count of detected errors and an initial highest detected error count,
scale the raw count of detected errors with either a with either a first logarithmic scale or a first linear scale to determine a logarithmically or linearly scaled total error count,
scale the initial highest detected error count with either a with either a second logarithmic scale or a second linear scale to determine a logarithmically or linearly scaled highest error count, and
store the logarithmically or linearly scaled total error count and the logarithmically or linearly scaled highest error count in a user-accessible storage location.
12. The apparatus of claim 11 , wherein the raw count of detected errors corresponds to either (i) a number of the plurality of rows that include at least one bit error, or (ii) a total number of code word errors detected during the error detection operation.
13. The apparatus of claim 11 , wherein the initial highest detected error count corresponds to one of the plurality of rows that generated a largest number of errors during the error detection operation.
14. The apparatus of claim 11 , wherein the circuitry is configured to scale the raw count of detected errors and to scale the initial highest detected error count with a logarithmic scale, a linear scale, or a combination thereof.
15. The apparatus of claim 11 , wherein the user-accessible storage location comprises a mode register of the apparatus.
16. The apparatus of claim 11 , wherein the apparatus is a DRAM device.
17. The apparatus of claim 11 , wherein:
the raw count of detected errors is a first raw count of detected errors corresponding to a number of the plurality of rows that include at least one bit error,
the error detection operation further determines a second raw count of detected errors corresponding to a total number of code word errors detected during the error detection operation,
the circuitry is further configured to scale with either a with either a third logarithmic scale or a third linear scale the second raw count of detected errors to determine a second logarithmically or linearly scaled total error count and to store the second logarithmically or linearly scaled total error count in the user-accessible storage location.