Resistive random access memory, and method for manufacturing resistive random access memory

1. A resistive random access memory comprising:

a memory cell, including a first resistive element having a resistance which varies according to a write operation, and configured to store data according to the resistance of the first resistive element;

a first reference resistive element having a resistance set to a first value;

a first voltage line, set to a first voltage during a first write operation in which the resistance of the first resistive element is varied from a second value higher than the first value to the first value; and

a first voltage control circuit, arranged between a first end of the first resistive element and a first end of the first reference resistive element, and configured to adjust a value of the first voltage supplied from the first voltage line so as to reduce a difference between currents flowing through the first resistive element and the first reference resistive element during the first write operation, and supply the adjusted first voltage to the first end of the first resistive element and the first end of the first reference resistive element.

2. The resistive random access memory as claimed in claim 1 , wherein the first voltage control circuit includes

a first variable resistive element, arranged between the first voltage line and the first end of the first resistive element, and having a resistance which varies according to a first control signal,

a second variable resistive element, arranged between the first voltage line and the first end of the first reference resistive element, and having a resistance which varies according to the first control signal, and

a first voltage comparator configured to compare a voltage at the first end of the first resistive element with a voltage at the first end of the first reference resistive element, and output the first control signal which decreases the resistances of the first variable resistive element and the second variable resistive element as the voltage at the first end of the first resistive element becomes higher than the voltage at the first end of the first reference resistive element.

3. The resistive random access memory as claimed in claim 2 , wherein

the first variable resistive element includes a first p-channel MOS transistor having a source coupled to the first voltage line, a drain coupled to the first end of the first resistive element, and a gate which receives the first control signal,

the second variable resistive element includes a second p-channel MOS transistor having a source coupled to the first voltage line, a drain coupled to the first end of the first reference resistive element, and a gate which receives the first control signal, and

the first voltage comparator includes a first operational amplifier having an inverting input terminal coupled to the first end of the first resistive element, a non-inverting input terminal coupled to the first end of the first reference resistive element, and an output terminal which outputs the first control signal,

wherein the first operational amplifier is configured to amplify a difference between the voltage at the first end of the first resistive element and the voltage at the first end of the first reference resistive element, and output the first control signal which causes a feedback control of a source-drain current of the first p-channel MOS transistor and a source-drain current of the second p-channel MOS transistor.

4. The resistive random access memory as claimed in claim 1 , further comprising:

a plurality of first reference resistive elements; and

a first write control circuit configured to couple the first end of at least one of the plurality of the first reference resistive elements to the first voltage control circuit during the first write operation,

wherein the resistance of the first resistive element set by the first write operation is set to one of a plurality of first values according to a number of first reference resistive elements coupled to the first voltage control circuit.

5. The resistive random access memory as claimed in claim 3 , wherein

the second variable resistive element includes a plurality of second p-channel MOS transistors, and

the resistance of the first resistive element set by the first write operation is set to one of a plurality of the first values according to a number of second p-channel MOS transistors coupled between the first voltage line and the first reference resistive element.

6. The resistive random access memory as claimed in claim 1 , wherein

the other, second end of the first resistive element is coupled to a reference voltage line which is set to a reference voltage, and

the other, second end of the first reference resistive element is coupled to a voltage line which is set to a voltage higher than the reference voltage.

7. The resistive random access memory as claimed in claim 1 , wherein the first voltage control circuit includes

a first n-channel MOS transistor having a source coupled to the first end of the first resistive element, and a gate and a drain coupled to each other,

a second n-channel MOS transistor having a source coupled to the first end of the first reference resistive element, and a gate coupled to the gate of the first n channel MOS transistor,

a seventh p-channel MOS transistor having a drain coupled to the drain of the first n-channel MOS transistor, and a source coupled to the first voltage line which is set to the first voltage during the first write operation, and

an eighth p-channel MOS transistor having a drain and a gate coupled to a drain of the second n-channel MOS transistor and a gate of the seventh p-channel MOS transistor, and a source coupled to the first voltage line which is set to the first voltage during the first write operation.

8. The resistive random access memory as claimed in claim 1 , further comprising:

a second reference resistive element having a resistance set to the second value; and

a second voltage control circuit, arranged between a second voltage line which is set to the first voltage during a second write operation in which the resistance of the first resistive element is varied from the first value to the second value, and first ends of the first resistive element and the second reference resistive element, and configured to adjust a value of a second voltage supplied from the second voltage line so as to reduce a difference between currents flowing through the first resistive element and the second reference resistive element during the second write operation, and supply the adjusted second voltage to the other, second end of the first resistive element and the first end of the first reference resistive element.

9. The resistive random access memory as claimed in claim 8 , wherein the second voltage control circuit includes

a third variable resistive element, arranged between the second voltage line and the other, second end of the first resistive element, and having a resistance which varies according to a second control signal,

a fourth variable resistive element, arranged between the second voltage line and the first end of the second reference resistive element, and having a resistance which varies according to the second control signal, and

a second voltage comparator configured to compare a voltage at the other, second end of the first resistive element with a voltage at the first end of the second reference resistive element, and output the second control signal which decreases the resistances of the third variable resistive element and the fourth variable resistive element as the voltage at the other, second end of the first resistive element becomes lower than the voltage at first end of the second reference resistive element.

10. The resistive random access memory as claimed in claim 9 , wherein

the third variable resistive element includes a third p-channel MOS transistor having a source coupled to the second voltage line, a drain coupled to the other, second end of the first resistive element, and a gate which receives the second control signal,

the fourth variable resistive element includes a fourth p-channel MOS transistor having a source coupled to the second voltage line, a drain coupled to the first end of the second reference resistive element, and a gate which receives the second control signal, and

the second voltage comparator includes a second operational amplifier having a non-inverting input terminal coupled to the other, second end of the first resistive element, an inverting input terminal coupled to the first end of the second reference resistive element, and an output terminal which outputs the second control signal,

wherein the second operational amplifier is configured to amplify a difference between the voltage at the other, second end of the first resistive element and the voltage at the first end of the second reference resistive element, and output the second control signal which causes a feedback control of a source-drain current of the third p-channel MOS transistor and a source-drain current of the fourth p-channel MOS transistor.

11. The resistive random access memory as claimed in claim 1 , further comprising:

a third reference resistive element having a resistance set between the first value and the second value;

a third voltage control circuit, arranged between a third voltage line which is set to a third voltage during a read operation which reads data stored in the memory cell, and the other, second of the first resistive element and a first end of the third reference resistive element, and configured to adjust a value of the third voltage supplied from the third voltage line so as to reduce a difference between currents flowing through the first resistive element and the third reference resistive element during the read operation, and supply the adjusted third voltage to the first end of the first resistive element and the first end of the third reference resistive element; and

a sense amplifier configured to determine the data stored in the memory cell based on a voltage at the other, second end of the first resistive element and a reference voltage.

12. The resistive random access memory as claimed in claim 11 , wherein the third voltage control circuit includes

a fifth variable resistive element, arranged between the third voltage line and the other, second end of the first resistive element, and having a resistance which varies according to a third control signal,

a sixth variable resistive element, arranged between the third voltage line and a first end of the third reference resistive element, and having a resistance which varies according to the third control signal, and

a third voltage comparator configured to compare the voltage at the other, second end of the first resistive element with a voltage at a first end of the third reference resistive element, and output the third control signal, which decreases the resistances of the fifth variable resistive element and the sixth variable resistive element as the voltage at the other, second end of the first resistive element becomes higher than the voltage at first end of the third reference resistive element, and increases the resistances of the fifth variable resistive element and the sixth variable resistive element as the voltage at the other, second end of the first resistive element becomes lower than the voltage at first end of the third reference resistive element.

13. The resistive random access memory as claimed in claim 12 , wherein

the fifth variable resistive element includes a fifth p-channel MOS transistor having a source coupled to the third voltage line, a drain coupled to the first end of the first resistive element, and a gate which receives the third control signal,

the sixth variable resistive element includes a sixth p-channel MOS transistor having a source coupled to the third voltage line, a drain coupled to the first end of the third reference resistive element, and a gate which receives the third control signal, and

the third voltage comparator includes a third operational amplifier having a non-inverting input terminal coupled to the first end of the first resistive element, an inverting input terminal coupled to the first end of the third reference resistive element, and an output terminal which outputs the third control signal,

wherein the third operational amplifier is configured to amplify a difference between the voltage at the first end of the first resistive element and the voltage at the first end of the third reference resistive element, and output the third control signal which causes a feedback control of a source-drain current of the fifth p-channel MOS transistor and a source-drain current of the sixth p-channel MOS transistor.

14. The resistive random access memory as claimed in claim 11 , wherein the third voltage control circuit includes

a third n-channel MOS transistor having a source coupled to the first end of the first resistive element, and a gate and a drain coupled to each other,

a fourth n-channel MOS transistor having a source coupled to the first end of the first reference resistive element, and a gate coupled to the gate of the third n-channel MOS transistor,

a seventh p-channel MOS transistor having a drain is coupled to the drain of the third n-channel MOS transistor, and a source coupled to the third voltage line which is set to the third voltage during the read operation, and

an eighth p-channel MOS transistor having a drain and a gate coupled to a drain of the fourth n-channel MOS transistor and a gate of the seventh p-channel MOS transistor, and a source coupled to the third voltage line which is set to the third voltage during the read operation.

15. The resistive random access memory as claimed in claim 1 , further comprising:

a plurality of the first resistive elements;

a plurality of word lines coupled to first ends of the plurality of the first resistive elements; and

a plurality of bit lines coupled to the other, second ends of the plurality of first resistive elements, and intersecting the plurality of word lines,

wherein the plurality of the first resistive elements are arranged at intersections of the plurality of word lines and the plurality of bit lines, respectively, and

the first reference resistive element and the first voltage control circuit are coupled to each of the plurality of bit lines.

16. The resistive random access memory as claimed in claim 15 , further comprising:

a fourth reference resistive element coupled in parallel to the first reference resistive element which is provided on each of the plurality of bit lines; and

a first resistance setting circuit, provided on each of the plurality of the bit lines, and configured to set a resistance of the fourth reference resistive element, before setting a resistance of one of the plurality of first resistive elements coupled to one of the plurality of the bit lines to the first value, to the same resistance as a combined resistance of other first resistive elements coupled to the plurality of the bit lines during the first write operation.

17. The resistive random access memory as claimed in claim 8 , further comprising:

a plurality of the first resistive elements;

a plurality of word lines coupled to the first end of the plurality of the first resistive elements; and

a plurality of bit lines, coupled to the other, second end of the plurality of first resistive elements, and intersecting the plurality of word lines,

wherein the plurality of the first resistive elements are arranged at intersections of the plurality of word lines and the plurality of bit lines, respectively, and

the second reference resistive element and the second voltage control circuit are coupled to each of the plurality of bit lines.

18. The resistive random access memory as claimed in claim 17 , further comprising:

a fifth reference resistive element coupled in parallel to the second reference resistive element which is provided on each of the plurality of bit lines; and

a second resistance setting circuit is provided for each of the plurality of the bit lines, and configured to set a resistance of the fifth reference resistive element, before setting a resistance of one of the plurality of first resistive elements coupled to one of the plurality of the bit lines to the second value, to the same resistance as a combined resistance of other first resistive elements coupled to the plurality of the bit lines during the second write operation.

19. The resistive random access memory as claimed in claim 15 , further comprising:

a reference word line;

a sixth reference resistive element arranged at each of intersections of the reference word line and the plurality of the bit lines; and

a read control circuit, coupled to each of the plurality of the bit lines, and configured to perform a read operation in which data is read from the first resistive element, which is a target of the read operation and is coupled to one of the plurality of the bit lines,

wherein the read control circuit includes

a first capacitive element,

a second capacitive element,

a first switch, arranged between one end of the first capacitive element and a corresponding bit line among the plurality of bit lines, and configured to turn on during a first period of the read operation in which a current from the corresponding bit line only flows to the sixth reference resistive element, and turn off during a second period of the read operation in which the current from the corresponding bit line only flows to the first resistive element, which is the target of the read operation,

a second switch, arranged between one end of the second capacitive element and a corresponding bit line among the plurality of bit lines, and configured to turn off during the first period, and turn on during the second period,

a current integration circuit configured to generate a voltage according to the current flowing through the bit line, and

a sense amplifier configured to determine the data stored in the first resistive element, which is the target of the read operation, based on a voltage according to a charge accumulated in the first capacitive element, and a voltage according to a charge accumulated in the second capacitive element.

20. A method for controlling a resistive random access memory which includes a memory cell, including a first resistive element having a resistance which varies according to a write operation and configured to store data according to the resistance of the first resistive element, and a first reference resistive element having a resistance set to a first value, the method comprising:

setting a first voltage line to a first voltage during a first write operation in which the resistance of the first resistive element is varied from a second value higher than the first value to the first value;

generating the first voltage supplied to a first end of the first resistive element and a first end of the first reference resistive element during the first write operation;

adjusting a value of the first voltage supplied from the first voltage line so as to reduce a difference between currents flowing through the first resistive element and the first reference resistive element during the first write operation, thereby supplying the adjusted first voltage to the first end of the first resistive element and the first end of the first reference resistive element.