Light-emitting device
View Patent ↗A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.
1. A light-emitting device, comprising:
a semiconductor stack comprising:
a first semiconductor layer, comprising a first top surface and a bottom surface;
an active layer located on the first semiconductor layer; and
a second semiconductor layer located on the active layer and comprising
a second top surface;
a first electrode located on the first top surface;
a second electrode located on the second top surface; and
a first supporting layer comprising a first thickness, a first surface, and a second surface opposite to the first surface, and connected to the bottom surface via the first surface to cover at least 80% area of the bottom surface, wherein the first thickness is measured from the first surface to the second surface;
wherein, in a top view, the semiconductor stack comprises a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1; and
wherein the first supporting layer comprises a first thermal expansion coefficient smaller than 80 ppm/° C., and a Young's modulus between 2˜10 GPa.
2. The light-emitting device according to claim 1 , wherein, in the top view, the semiconductor stack comprises a boundary located outside the first supporting layer.
3. The light-emitting device according to claim 2 , further comprising a second supporting layer covering the second top surface, and wherein the second supporting layer comprises a second thickness and a second thermal expansion coefficient, the second thickness is smaller than the first thickness, and the second thermal expansion coefficient is larger than the first thermal expansion coefficient.
4. The light-emitting device according to claim 1 , wherein, the first supporting layer is a solid layer.
5. The light-emitting device according to claim 1 , wherein the first supporting layer is a hollow layer comprising openings under the bottom surface.
6. The light-emitting device according to claim 5 , further comprising a second supporting layer covering the second top surface, and wherein the second supporting layer comprises a second thickness and a second thermal expansion coefficient, the second thickness is smaller than the first thickness, and the second thermal expansion coefficient is larger than the first thermal expansion coefficient.
7. The light-emitting device according to claim 1 , wherein the semiconductor stack further comprises a side surface, and the first supporting layer covers the side surface.
8. The light-emitting device according to claim 1 , further comprising an adhesive layer located between the semiconductor stack and the first supporting layer, and comprising a thickness between 150˜500 nm.
9. The light-emitting device according to claim 1 further comprising:
a wavelength conversion layer located between the bottom surface and the first supporting layer.
10. The light-emitting device according to claim 9 , further comprising a second supporting layer, wherein the semiconductor stack further comprises a side surface, and the second supporting layer covers the side surface.
11. The light-emitting device according to claim 10 , wherein the second supporting layer comprises a second thickness and a second thermal expansion coefficient, the second thickness is smaller than the first thickness, and the second thermal expansion coefficient is larger than the first thermal expansion coefficient.
12. The light-emitting device according to claim 10 , wherein the first supporting layer comprises a first outer surface, the second supporting layer comprises a second outer surface, and the first outer surface and the second outer surface are coplanar with each other.
13. The light-emitting device according to claim 9 , wherein, in the top view, the semiconductor stack comprises a first boundary, the wavelength conversion layer comprises a second boundary, the first supporting layer comprises a third boundary, the second boundary encompasses the first boundary, and the third boundary encompasses the second boundary.
14. The light-emitting device according to claim 1 , wherein, in the top view, the first supporting layer comprises a boundary located outside the semiconductor stack.
15. A light-emitting device, comprising:
a semiconductor stack comprising:
a first semiconductor layer, comprising a first top surface and a bottom surface;
an active layer located on the first semiconductor layer; and
a second semiconductor layer located on the active layer and comprising
a second top surface;
a first electrode located on the first top surface;
a second electrode located on the second top surface;
a first supporting layer comprising a first thickness, and covering at least 80% of the bottom surface; and
a second supporting layer covering the second top surface, and wherein the second supporting layer comprises a second thickness and a second thermal expansion coefficient, the second thickness is smaller than the first thickness, and the second thermal expansion coefficient is larger than the first thermal expansion coefficient;
wherein, in a top view, the semiconductor stack comprises a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1; and
wherein the first supporting layer comprises a first thermal expansion coefficient smaller than 80 ppm/° C., and a Young's modulus between 2˜10 GPa.
16. The light-emitting device according to claim 15 further comprising an adhesive layer located between the semiconductor stack and the first supporting layer, and comprising a thickness between 150˜500 nm.
17. The light-emitting device according to claim 15 further comprising:
a wavelength conversion layer located between the bottom surface and the first supporting layer.
18. The light-emitting device according to claim 15 , wherein, in the top view, the semiconductor stack comprises a first boundary, the wavelength conversion layer comprises a second boundary, the first supporting layer comprises a third boundary, the second boundary encompasses the first boundary, and the third boundary encompasses the second boundary.
19. The light-emitting device according to claim 18 , wherein the first supporting layer comprises a first outer surface, the second supporting layer comprises a second outer surface, and the first outer surface and the second outer surface are coplanar with each other.
20. The light-emitting device according to claim 15 further comprising a second supporting layer, wherein the semiconductor stack further comprises a side surface, and the second supporting layer covers the side surface.