Packaged white light emitting devices comprising photoluminescence layered structure
A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.
1. A tunable packaged light emitting device comprising:
a substrate;
a package having a cavity wherein the substrate comprises a floor of the cavity;
at least one Chip Scale Packaged (CSP) Light Emitting Diode (LED) mounted on the substrate, the CSP LED comprising a first LED chip that generates excitation light with a dominant wavelength from 440 nm to 470 nm;
at least one second LED chip that generates excitation light with a dominant wavelength from 440 nm to 470 nm mounted on the substrate;
an electrical arrangement for changing a relative power applied to the at least one CSP LED and the at least one second LED chip to tune a color of light generated by the light emitting device; and
a photoluminescence layer that covers the at least one CSP LED and the at least one second LED chip, the photoluminescence layer comprising photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm,
wherein the at least one CSP LED comprises a further photoluminescence layer that covers a light emitting face of the first LED chip, the further photoluminescence layer comprising from 75 weight percent (wt %) to 100 wt % of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the further photoluminescence layer.
2. The light emitting device of claim 1 , further comprising a light reflective material that covers light emitting side faces of the first LED chip.
3. The light emitting device of claim 2 , further comprising a light transmissive material disposed between the light reflective material and the light emitting side faces of the first LED chip.
4. The light emitting device of claim 1 , wherein the further photoluminescence layer covers all light emitting faces of the first LED chip.
5. The light emitting device of claim 1 , wherein the further photoluminescence layer has a thickness from 20 μm to 300 μm.
6. The light emitting device of claim 1 , wherein the further photoluminescence layer comprises from 95 wt % to 100 wt % manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the further photoluminescence layer.
7. The light emitting device of claim 1 , wherein the manganese-activated fluoride photoluminescence material comprises at least one of: K 2 SiF 6 :Mn 4+ , K 2 TiF 6 :Mn 4+ , and K 2 GeF 6 :Mn 4+ .
8. A tunable packaged light emitting device comprising:
a substrate;
a package having a cavity wherein the substrate comprises a floor of the cavity;
at least one first Chip Scale Packaged (CSP) Light Emitting Diode (LED) mounted on the substrate;
at least one second CSP LED mounted on the substrate; and
an electrical arrangement for changing a relative power to the first and second CSP LEDs to tune color of light generated by the light emitting device,
wherein the at least one first CSP LED generates light of a first color and the at least one second CSP LED generates light of a second different color,
wherein the at least one first and second CSP LEDs each comprise:
an LED chip that generates excitation light;
a first photoluminescence layer that covers a light emitting face of the LED chip, said photoluminescence layer comprising from 75 weight percent (wt %) to 100 wt % of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the layer;
a second photoluminescence layer comprising photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm, wherein the second photoluminescence layer covers the first photoluminescence layer; and
a light reflective material that covers light emitting side faces of the LED chip.
9. The light emitting device of claim 8 , wherein the at least one first and second CSP LEDs further comprise a light transmissive material disposed between the light reflective material and the light emitting side faces of the LED chip.
10. The light emitting device of claim 8 , wherein the first photoluminescence layer has a thickness from 20 μm to 300 μm.
11. The light emitting device of claim 8 , wherein the first photoluminescence layer comprises from 95 wt % to 100 wt % manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the first photoluminescence layer.
12. The light emitting device of claim 8 , wherein the manganese- activated fluoride photoluminescence material comprises at least one of: K 2 SiF 6 :Mn 4+ , K 2 TiF 6 :Mn 4+ , and K 2 GeF 6 :Mn 4+ .
13. A tunable packaged light emitting device comprising:
a substrate;
a package having a cavity wherein the substrate comprises a floor of the cavity;
at least one first Chip Scale Packaged (CSP) Light Emitting Diode (LED) mounted on the substrate;
at least one second CSP LED mounted on the substrate; and
an electrical arrangement for changing a relative power to the at least one first and second CSP LEDs to tune a color of light generated by the light emitting device,
wherein the at least one first CSP LED generates light of a first color and the at least one second CSP LED generates light of a second different color,
wherein the at least one first and second CSP LEDs each comprise:
an LED chip that generates excitation light;
a first photoluminescence layer that covers all light emitting faces of the LED chip, said photoluminescence layer comprising from 75 weight percent (wt %) to 100 wt % of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the layer; and
a second photoluminescence layer comprising photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm, wherein the second photoluminescence layer covers the first photoluminescence layer.
14. The light emitting device of claim 13 , wherein the first photoluminescence layer has a thickness from 20 μm to 300 μm.
15. The light emitting device of claim 13 , wherein the first photoluminescence layer comprises from 95 wt % to 100 wt % manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the first photoluminescence layer.
16. The light emitting device of claim 13 , wherein the manganese-activated fluoride photoluminescence material comprises at least one of: K 2 SiF 6 :Mn 4+ , K 2 TiF 6 :Mn 4+ , and K 2 GeF 6 :Mn 4+ .