Corrosion-resistant components
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.
1 . A component comprising:
(a) a ceramic insulating substrate;
wherein the ceramic insulating substrate is selected from the group consisting of aluminum oxides, aluminum nitrides, silicon nitrides, and mixtures thereof; and
(b) an outer layer adhered to the ceramic insulating substrate, the outer layer comprising:
a porosity of at most 1%;
an average grain size of at least 100 nm and at most 100 μm;
a composition comprising at least 15% by weight of a rare earth compound based on total weight of the outer layer;
wherein the rare earth compound is selected from the group consisting of yttrium oxide, yttrium silicates, yttrium fluorides, yttrium oxyfluorides, yttrium aluminates, yttrium nitrides, and mixtures thereof;
a thickness from about 50 μm to about 500 μm; and
a microstructure having less than 50 microcracks and fissures per mm 2 ;
wherein the component realizes a loss tangent of less than 1×10 −4 .
2 . The component of claim 1 , wherein the outer layer is adhered to the ceramic insulating substrate, and wherein an adhesion strength between the outer layer and the ceramic insulating substrate is at least 20 MPa.
3 . The component of claim 1 , further comprising a carbon content of at most 1000 ppm.
4 . The component of claim 1 , wherein the porosity is at most 0.5%, the thickness is at least 100 μm, and the average grain size is at least about 300 nm and at most about 30 μm.
5 . The component of claim 1 , wherein the outer layer further comprises a sintering aid selected from the group consisting of ZrO 2 , HfO 2 , and CeO 2 added to the rare-earth compound in the range from about 300 ppm to about 20% by weight based upon a total weight of the rare-earth compound.
6 . The component of claim 1 , further comprising at least one interposing layer embedded in the ceramic insulating substrate or layered between the ceramic insulating substrate and the outer layer, wherein a material of the at least one interposing layer is selected from the group consisting of rare earth oxides, rare earth silicates, rare earth aluminates, and mixtures thereof.
7 . The component of claim 6 , wherein the at least one interposing layer is adhered to both the outer layer and to the ceramic insulating substrate, and the outer layer has an adhesion strength of at least 20 MPa.
8 . The component of claim 6 , wherein the material of the at least one interposing layer consists essentially of ytterbium oxide (Yb 2 O 3 ).
9 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 9.1×10 −5 .
10 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 7.7×10 −5 .
11 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 4.5×10 −5 .
12 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 3.9×10 −5 .
13 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 2.4×10 −5 .
14 . The component of claim 1 , wherein the component realizes a loss tangent of not greater than 2.1×10 −5 .
15 . A component comprising:
(a) an aluminum oxide substrate; and
(b) an outer yttrium oxide layer proximal the aluminum oxide substrate, the outer layer comprising:
(i) a porosity of at most 1%;
(ii) an average grain size of at least 100 nm and at most 100 μm;
(iii) a composition comprising at least 15% by weight of the yttrium oxide based on total weight of the outer layer;
(iv) a thickness from about 50 μm to about 500 μm; and
(v) a microstructure having less than 50 microcracks and fissures per mm 2 ;
wherein the component realizes a loss tangent of less than 1×10 −4 .
16 . The component of claim 15 , wherein the aluminum oxide substrate consists essentially of aluminum oxide.
17 . The component of claim 16 , wherein the outer yttrium oxide layer consists essentially of yttrium oxide.
18 . The component of claim 17 , wherein the component comprises an interposing layer, and wherein the interposing layer is disposed between the outer yttrium oxide layer and the aluminum oxide substrate.
19 . The component of claim 18 , wherein the interposing layer comprises ytterbium oxide.
20 . The component of claim 17 , wherein the component is configured for use in fabricating semiconductor chips and for in-situ cleaning with halogen gases.
21 . The component of claim 20 , wherein the component is configured for use as a lid of a semiconductor processing reactor.
22 . The component of claim 21 , wherein the lid is configured to permit magnetic fields created outside the reactor to pass through the reactor and occur in the reactor.