Compositions and methods for stabilizing perovskite interfaces
The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX 3 and a second layer that includes a perovskite-like material defined by at least one of A′ 2 B′X′ 4 , A′ 3 B′ 2 X′ 9 , A′B′X′ 4 , A′ 2 B′X′ 6 , and/or A′ 2 AB′ 2 X′ 7 , where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.
1. A composition comprising:
a first layer comprising a perovskite defined by ABX 3 ; and
a second layer comprising a perovskite-like material defined by at least one of A′ 2 B′X′ 4 , A′ 3 B′ 2 X′ 9 , A′B′X′ 4 , A′ 2 B′X′ 6 , or A′ 2 AB′ 2 X′ 7 , wherein:
the first layer is adjacent to the second layer,
A is a first cation, B is a second cation, X is a first anion,
A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and
A′ is different than A.
2. The composition of claim 1 , wherein A′ comprises an ammonium functional group.
3. The composition of claim 2 , wherein A′ comprises at least one of butylammonium (BA), phenylethylammonium (PEA), 4-flouorophenethylammonium (F-PEA), N-methyl-1,3-propane diammonium (ME-PDA), 1,4-butane diammonium (BDA), or N,N-dimethyl-1,3-propane diammonium (DMePDA), dipropylammonium, or diethylammonium.
4. The composition of claim 1 , wherein the second layer has a thickness between about 1 nm and about 1 μm.
5. The composition of claim 4 , wherein the thickness is between about 10 nm and about 100 nm.
6. The composition of claim 1 , wherein the first layer has a thickness between about 200 nm and about 1000 nm.
7. The composition of claim 1 , wherein X comprises a halide.
8. The composition of claim 7 , wherein X comprises at least one of iodide, bromide, or chloride.
9. The composition of claim 1 , wherein B comprises at least one of tin or lead.
10. The composition of claim 1 , wherein A comprises at least one of methylammonium (MA), formamidinium (FA), dimethylammonium, or cesium.
11. The composition of claim 10 , wherein the perovskite comprises FA (1-x-y) MA x Cs y PbI (3-z) Br z .
12. The composition of claim 1 , wherein X′ comprises a halide.
13. The composition of claim 12 , wherein X′ comprises at least one of iodide, bromide, or chloride.
14. The composition of claim 1 , wherein B′ comprises at least one of tin or lead.
15. The composition of claim 1 , wherein the perovskite-like material comprises BA 2 (MA x FA 1-x )Pb 2 (I 1-y Br y ) 7 .
16. The composition of claim 1 , wherein the perovskite-like material comprises at least one of BA 2 PbI 4 , BA 2 PbBr 4 , BA 2 MAPb 2 I 7 , BA 2 FAPb 2 I 7 , BA 2 MAPb 2 Br 7 , or BA 2 FAPb 2 Br 7 .
17. A device comprising:
a first layer comprising:
a perovskite;
a surface that is substantially planar;
the surface comprises a cut into the surface; and
the cut penetrates the surface and the first layer and comprises a width, a depth, a length, and an internal surface;
a second layer comprising a perovskite-like material, wherein:
the second layer covers at least a portion of the internal surface.
18. A method comprising:
depositing a second layer onto a first layer, wherein:
the first layer comprises a perovskite,
the second layer comprises a perovskite-like layer, and
the depositing is performed using at least one of a solution method or a vapor-phase method.
19. The method of claim 18 , wherein the depositing is performed using the vapor-phase method while simultaneously heating at least a portion of the first layer.
20. The method of claim 19 , wherein the depositing is performed using an atomic layer deposition (ALD) technique.