Organic light-emitting diode device and display apparatus
Disclosed is an organic light-emitting diode device including: an electron transport layer, a hole blocking layer and a light emitting layer arranged in a stacked manner; the hole blocking layer includes a first material, and the electron transport layer includes the first material.
1. An organic light-emitting diode device, comprising:
an electron transport layer, a hole blocking layer and a light emitting layer arranged in a stacked manner;
wherein the hole blocking layer comprises a first material configured to block a hole in the light emitting layer, and the electron transport layer comprises the first material;
wherein the electron transport layer comprises a first film layer and a second film layer stacked on the first film layer, the second film layer is adjacent to the hole blocking layer, and the second film layer comprises the first material;
wherein the first film layer excludes the first material.
2. The organic light-emitting diode device according to claim 1 , wherein the hole blocking layer and the second film layer are formed in a same film forming process.
3. The organic light-emitting diode device according to claim 2 , wherein the film forming process is an evaporation process.
4. The organic light-emitting diode device according to claim 1 , wherein the light emitting layer comprises an electronic blue light emitting material.
5. The organic light-emitting diode device according to claim 1 , wherein the first material is one of phenanthroline (Bphen), bathocuproine (BCP), and 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi).
6. The organic light-emitting diode device according to claim 1 , wherein the electron transport layer is doped with 8-hydroxyquinoline-lithium (Liq).
7. The organic light-emitting diode device according to claim 6 , wherein a doping ratio of the 8-hydroxyquinoline-lithium (Liq) in the electron transport layer is in a range of 20% to 80%.
8. The organic light-emitting diode device according to claim 1 , wherein an electron mobility of the first material is less than 1×10 −6 cm 2 V −1 s −1 .
9. The organic light-emitting diode device according to claim 1 , wherein a lowest unoccupied molecular orbital energy level of the first material in the second film layer is less than a lowest unoccupied molecular orbital energy level of the first material in the hole blocking layer.
10. The organic light-emitting diode device according to claim 9 , wherein the lowest unoccupied molecular orbital energy level of the first material in the hole blocking layer is less than −2.6 ev, and the lowest unoccupied molecular orbital energy level of the first material in the second film layer is greater than −2.6 ev.
11. The organic light-emitting diode device according to claim 9 , wherein the lowest unoccupied molecular orbital energy level of the first material in the second film layer is less than 2 ev.
12. The organic light-emitting diode device according to claim 9 , wherein the lowest unoccupied molecular orbital energy level of the first material in the second film layer is greater than 1 ev.
13. The organic light-emitting diode device according to claim 8 , wherein thicknesses of the second film layer and the hole blocking layer are both in a range of 2 nm to 10 nm.
14. The organic light-emitting diode device according to claim 13 , wherein the thickness of the hole blocking layer is less than the thickness of the second film layer.
15. The organic light-emitting diode device according to claim 8 , wherein a thickness of the electron transport layer is in a range of 15 nm to 50 nm.
16. The organic light-emitting diode device according to claim 9 , wherein the hole blocking layer further comprises a lithium compound, a zinc powder, and a phosphorescent material.
17. The organic light-emitting diode device according to claim 1 , further comprising an electron blocking layer, a hole transport layer, and a hole injection layer which are stacked on a side of the light emitting layer away from the electron transport layer;
wherein the electron blocking layer is adjacent to the light emitting layer, and the hole transport layer is located between the electron blocking layer and the hole injection layer.
18. A display apparatus, comprising an organic light-emitting diode device, the organic light-emitting diode device comprising:
an electron transport layer, a hole blocking layer and a light emitting layer arranged in a stacked manner;
wherein the hole blocking layer comprises a first material configured to block a hole in the light emitting layer, and the electron transport layer comprises the first material;
wherein the electron transport layer comprises a first film layer and a second film layer stacked on the first film layer, the second film layer is adjacent to the hole blocking layer, and the second film layer comprises the first material;
wherein the first film layer excludes the first material.
19. An organic light-emitting diode device, comprising:
an electron transport layer, a hole blocking layer and a light emitting layer arranged in a stacked manner;
wherein the hole blocking layer comprises a first material configured to block a hole in the light emitting layer, and the electron transport layer comprises the first material;
wherein the electron transport layer comprises a first film layer and a second film layer stacked on the first film layer, the second film layer is adjacent to the hole blocking layer, and the second film layer comprises the first material;
wherein a lowest unoccupied molecular orbital energy level of the first material in the second film layer is less than a lowest unoccupied molecular orbital energy level of the first material in the hole blocking layer.
20. The organic light-emitting diode device according to claim 19 , wherein the lowest unoccupied molecular orbital energy level of the first material in the hole blocking layer is less than −2.6 ev, and the lowest unoccupied molecular orbital energy level of the first material in the second film layer is greater than −2.6 ev.