Standby biasing techniques to reduce read disturbs

1. A storage system having an active state and a standby state, the storage system comprising:

a string driver circuit configured to isolate a global word line of a memory device of the storage system from a local word line of the memory device in a first state and to couple the global word line to the local word line in a second state; and

a standby voltage generator circuit configured to provide a high-voltage bias signal to the string driver circuit in an active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state, wherein the active period of the standby state is shorter than a refresh period of the standby state.

2. The storage system of claim 1 , wherein the standby state has a limited maximum standby current allowance, and

wherein the standby state is divided into the active period and the refresh period.

3. The storage system of claim 2 , wherein the standby voltage generator circuit is configured to provide the high-voltage bias signal in the active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state without exceeding the limited maximum standby current allowance.

4. The storage system of claim 3 , wherein the standby voltage generator circuit is configured to receive a low-voltage internal VCC of the storage system in the standby state.

5. The storage system of claim 1 , wherein the standby voltage generator circuit comprises:

a voltage generator control circuit configured to control transitions between the refresh and active periods in the standby state using first and second oscillators, the first oscillator configured to consume less power than the second oscillator.

6. The storage system of claim 5 , wherein the voltage generator control circuit is configured to receive a first clock signal from the first oscillator in the refresh period, to increment a first count using the received first clock signal, and to control transitions from the refresh period to the active period using a comparison of the first count to a first threshold, and

wherein the voltage generator control circuit is configured to receive a second clock signal from the second oscillator in the active period, to increment a second count using the received second clock signal, and to control transitions from the active period using a comparison of the second count to a second threshold.

7. The storage system of claim 1 , comprising:

a standby bias generator with sinking and sourcing capabilities configured to provide a positive bias to the global word line in the standby state,

wherein the positive bias comprises a low-voltage positive bias configured to sink voltage from a pillar of a string of memory cells coupled to the local word line to reduce read disturbance errors in the standby state, and

wherein the low-voltage positive bias comprises a low-voltage internal VCC in the storage system in the standby state.

8. The storage system of claim 1 , comprising:

an active voltage generator circuit configured to generate a high-voltage source in the active state and to be disabled in the standby state,

wherein the standby voltage generator circuit is configured to be enabled in the standby state and disabled in the active state.

9. A method comprising:

isolating, using a string driver circuit, a global word line of a memory device of a storage system from a local word line of the memory device in a first state;

coupling, using the string driver circuit, the global word line to the local word line in a second state; and

providing, using a standby voltage generator circuit, a high-voltage bias signal to the string driver circuit in an active period of a standby state of the storage system to enable the string driver circuit to couple the global word line to the local word line in the standby state,

wherein the active period of the standby state is shorter than a refresh period of the standby state.

10. The method of claim 9 , wherein the standby state has a limited maximum standby current allowance,

wherein the standby state is divided into the active period and the refresh period.

11. The method of claim 10 , wherein providing the high-voltage bias signal in the active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state comprises without exceeding the limited maximum standby current allowance.

12. The method of claim 11 , comprising:

receiving, using the standby voltage generator circuit, a low-voltage internal VCC of the storage system in the standby state,

wherein providing the high-voltage bias signal in the active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state comprises using the received low-voltage internal VCC of the storage system without exceeding the limited maximum standby current allowance.

13. The method of claim 9 , comprising:

controlling transitions between the refresh and active periods in the standby state using a voltage generator control circuit and first and second oscillators, the first oscillator configured to consume less power than the second oscillator,

wherein controlling transitions between the refresh and active periods comprises:

controlling transitions from the refresh period to the active period using the first oscillator; and

controlling transitions from the active period to the refresh period using the second oscillator.

14. The method of claim 13 , wherein controlling transitions from the refresh period to the active period comprises:

receiving a first clock signal from the first oscillator in the refresh period;

incrementing a first count using the received first clock signal; and

controlling transitions from the refresh period to the active period using a comparison of the first count to a first threshold, and

wherein controlling transitions from the active period to the refresh period comprises:

receiving a second clock signal from the second oscillator in the active period;

incrementing a second count using the received second clock signal; and

controlling transitions from the active period using a comparison of the second count to a second threshold.

15. The method of claim 9 , comprising:

providing a low-voltage positive bias to the global word line in the standby state using a standby bias generator with sinking and sourcing capabilities to sink voltage from a pillar of a string of memory cells coupled to the local word line to reduce read disturbance errors in the standby state,

wherein the low-voltage positive bias comprises a low-voltage internal VCC in the storage system in the standby state.

16. The method of claim 9 , comprising:

generating a high-voltage source in an active state of the storage system using an active voltage generator circuit, wherein the active voltage generator circuit is disabled in the standby state,

wherein the standby voltage generator circuit is disabled in the active state.

17. A storage system having an active state and a standby state, the storage system comprising:

means for isolating a global word line of a memory device of the storage system from a local word line of the memory device in a first state and coupling the global word line to the local word line in a second state; and

means for providing a high-voltage bias signal to the string driver circuit in an active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state, wherein the active period of the standby state is shorter than a refresh period of the standby state.

18. The storage system of claim 17 , wherein the standby state has a limited maximum standby current allowance,

wherein the standby state is divided into the active period and the refresh period, and

wherein the means for providing the high-voltage bias signal to the string driver circuit in the active period of the standby state comprises without exceeding the limited maximum standby current allowance.

19. The storage system of claim 18 , wherein the means for providing the high-voltage bias signal to the string driver circuit in the active period of the standby state comprises using a low-voltage internal VCC of the storage system in the standby state without exceeding the limited maximum standby current allowance.

20. The storage system of claim 19 , wherein the means for isolating the global word line of the memory device of the storage system from the local word line of the memory device in the first state and coupling the global word line to the local word line in the second state comprises a string driver circuit, and

wherein the means for providing the high-voltage bias signal to the string driver circuit in the active period of the standby state to enable the string driver circuit to couple the global word line to the local word line in the standby state comprises a standby voltage generator circuit comprising a voltage generator control circuit configured to control transitions between the refresh and active periods in the standby state and first and second oscillators, the first oscillator configured to consume less power than the second oscillator.