Granted Patent B2

US 12,217,954 · App. 17/407,839 · Granted Feb 4, 2025

Inventors: Shaoren Deng (Ghent, BE); Andrea Illiberi (Leuven, BE); Daniele Chiappe (Espoo, FI); Eva Tois (Espoo, FI); Giuseppe Alessio Verni (Jodoigne, BE); Michael Givens (Oud-Heverlee, BE); Varun Sharma (Helsinki, FI); Chiyu Zhu (Helsinki, FI); Shinya Iwashita (Helsinki, FI); Charles Dezelah (Helsinki, FI); Viraj Madhiwala (Helsinki, FI); Jan Willem Maes (Wilrijk, BE); Marko Tuominen (Helsinki, FI); Anirudhan Chandrasekaran (Herent, BE)

Assignee: ASM IP Holding B.V.

H01L21/02074B08B3/08B08B5/00C11D7/02C11D7/245C11D7/261C11D7/264C11D7/265C23C16/0227H01L21/28562C11D2111/22

Abstract

Claims (54)

1. A method for cleaning a substrate, the method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,

wherein the cleaning agent comprises a halogen-containing beta diketonate.

2. The method according to claim 1 wherein the oxidizing agent is an oxygen-comprising gas or gas mixture.

3. The method according to claim 1 wherein the oxidizing agent is a gas selected from O 2 , O 3 , H 2 O, H 2 O 2 , and mixtures thereof.

4. The method according to claim 1 wherein the reducing agent comprises an alcohol.

5. The method according to claim 1 wherein the cleaning agent further comprises carbon monoxide.

6. The method according to claim 1 wherein the cleaning agent further comprises a carboxylic acid.

7. The method according to claim 1 wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a further oxidizing agent to the reaction chamber.

8. The method according to claim 1 wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a cleaning residue removal agent to the reaction chamber.

9. The method according to claim 8 wherein the cleaning residue removal agent comprises an alcohol.

10. The method according to claim 9 wherein the alcohol comprises an alkyl alcohol.

11. The method according to claim 10 wherein the alkyl alcohol is selected from methanol, ethanol, isopropanol, and isobutanol.

12. The method according to claim 8 wherein the cleaning residue removal agent comprises a further oxidizing agent.

13. A method for cleaning a substrate, the method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,

wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a further oxidizing agent to the reaction chamber, and

wherein the step of providing a further oxidizing agent to the reaction chamber comprises, in the following order, providing O 2 to the reaction chamber in an O 2 pulse and providing H 2 O to the reaction chamber in a H 2 O pulse.

14. A system comprising one or more reaction chambers, a cleaning gas source, and a controller, the controller being configured for causing the system to carry out a method according to claim 1 .

15. A method for cleaning a substrate, the method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,

wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a cleaning residue removal agent to the reaction chamber,

wherein the cleaning residue removal agent comprises a further oxidizing agent, and

wherein the step of providing a cleaning residue removal agent to the reaction chamber comprises, in the following order, providing O 2 to the reaction chamber in an O 2 pulse and providing H 2 O to the reaction chamber in a H 2 O pulse.

16. A method for cleaning a substrate, the method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,

wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a cleaning residue removal agent to the reaction chamber, and

wherein the step of providing a cleaning residue removal agent to the reaction chamber comprises a first sub step and a second sub step, the first sub step comprising providing an alcohol to the reaction chamber, and the second sub step comprising providing an oxidizing agent to the reaction chamber.

17. A method for selectively depositing a material on a substrate comprising a metal surface and a dielectric surface, comprising the steps:

cleaning the substrate by means of a method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate; and

selectively depositing the material on one of the metal surface or the dielectric surface.

18. The method according to claim 17 wherein the material comprises a metal, and wherein the metal is deposited on the metal surface.

19. A method for cleaning a substrate, the method comprising:

providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;

providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;

providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,

providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,

wherein the cleaning agent comprises a compound comprising an alkyl-substituted cyclopentadienyl group.

Assignments (1)

Continuity (4)

References Cited (400)