BAW RESONATOR WITH IMPROVED PERFORMANCE
Aspects of the disclosure relate BAW resonator with improved performance, RF-filter. A BAW resonator with improved performance is provided. The resonator includes a piezoelectric material sandwiched between a first electrode and a second electrode. The piezoelectric material is provided as a monocrystalline material having a particular orientation defined by a particular Euler angle such as the piezoelectric material being LiTaO 3 and having an orientation with Euler angles selected from [0°±5°; 130°±15°; n°±5°], or a symmetrical equivalent.
1 . A BAW resonator, comprising
a piezoelectric material;
a first electrode coupled to the piezoelectric material; and
a second electrode coupled to the piezoelectric material,
wherein
the piezoelectric material is arranged between the first electrode and the second electrode,
wherein the piezoelectric material is LiTaO 3 and has an orientation with Euler angles selected from [0°±5°; 130°±15°; n°±5°], or a symmetrical equivalent, where n is variable.
2 . The BAW resonator of claim 1 , wherein the Euler angles are selected from [0°±5°; 130°±5°; n°±5°].
3 . The BAW resonator of claim 1 , wherein the Euler angles are selected from [0°±5°; 130°±15°; 0°±5°].
4 . The BAW resonator of claim 1 , further comprising an acoustic mirror to form an SMR-type resonator.
5 . The BAW resonator of claim 1 , wherein a cavity is defined to form an FBAR-type resonator.
6 . The BAW resonator of claim 1 , having a resonance frequency or an anti-resonance frequency above 3 GHz.
7 . The BAW resonator of claim 1 , where the orientation of the piezoelectric material establishes a longitudinal acoustic wave mode.
8 . The BAW resonator of claim 1 , wherein the piezoelectric material is derived from a wafer and is substantially monocrystalline.
9 . The BAW resonator of claim 1 , further comprising a carrier substrate.
10 . The BAW resonator of claim 1 , wherein the BAW resonator forms a portion of an RF filter circuit.
11 . The BAW resonator of claim 10 , wherein the RF filter circuit comprises a ladder-type like circuit topology or a lattice-type like circuit topology.
12 . A BAW resonator, comprising
a piezoelectric material;
a first electrode coupled to the piezoelectric material; and
a second electrode coupled to the piezoelectric material,
wherein
the piezoelectric material is arranged between the first electrode and the second electrode,
wherein the piezoelectric material is LiTaO 3 and has an orientation with Euler angles selected from at least one of the following:
[0°±5°; 130°±15°; n°±5°] where n is variable; or
[0°±5°; 130+n*180°±15°; n°±5°]; or
[Φ+n*120°±5°, 130°±15, n°±5°]; or
[Φ+n*60°, (−1){circumflex over ( )}n*130°±15, n°±5°].
13 . A BAW resonator, comprising:
a piezoelectric material;
a first electrode coupled to the piezoelectric material; and
a second electrode coupled to the piezoelectric material,
wherein
the piezoelectric material is arranged between the first electrode and the second electrode,
wherein the piezoelectric material is LiNbO 3 and has an orientation with Euler angles selected from at least one of the following:
[0°±5°; 130°±3°; n°±5°], where n is variable; or
[0°±5°; 130+n*180°±3°; n°±5°]; or
[Φ+n*120°±5°, 130°±3, n°±5°]; or
[Φ+n*60°, (−1){circumflex over ( )}n*130°±3, n°±5°].
14 . The BAW resonator of claim 13 wherein the Euler angles are selected from [0°±5°; 128°; n°±5°].
15 . The BAW resonator of claim 13 wherein the Euler angles are selected from [0°±5°; 130°±3°; 0°±5°].
16 . The BAW resonator of claim 13 further comprising an acoustic mirror to form an SMR-type resonator.
17 . The BAW resonator of claim 13 , wherein a cavity is defined to form an FBAR-type resonator.
18 . The BAW resonator of claim 13 , having a resonance frequency or an anti-resonance frequency above 3 GHz.
19 . The BAW resonator of claim 13 , wherein the piezoelectric material is derived from a wafer and is substantially monocrystalline.
20 . The BAW resonator of claim 13 , further comprising a carrier substrate.