Semiconductor device and the manufacturing method thereof
A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 μm, and a shortest distance between the second edge and the sixth edge is S2 μm; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of θ1 with the vertical direction, the second side surface forms a second acute angle with a degree of θ2 with the vertical direction, and a distance between the first modified trace and the upper surface in the vertical direction is D1 μm; and wherein S1, S2, θ1, θ2 and D1 satisfy the equation: D1≤0.2×(S1+S2)/tan θa, wherein θa=(θ1+θ2)/2.
1. A semiconductor device, comprising:
a substrate, comprising an upper surface, a first side surface, a second side surface opposite to the first side surface, a third side surface connecting the first side surface and the second side surface, and a fourth side surface opposite to the third side surface;
wherein the upper surface comprises a first edge connecting the first side surface, a second edge opposite to the first edge and connecting the second side surface, a third edge connecting the third side surface, and a fourth edge opposite to the third edge and connecting the fourth side surface;
a horizontal direction parallel to the upper surface and a vertical direction perpendicular to the upper surface;
a first modified trace formed on the first side surface;
and
a semiconductor stack formed on the upper surface, comprising a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge;
wherein a shortest distance between the first edge and the fifth edge is S1 μm, and a shortest distance between the second edge and the sixth edge is S2 μm;
wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of θ1 with the vertical direction, the second side surface forms a second acute angle with a degree of θ2 with the vertical direction, and a distance between the first modified trace and the upper surface in the vertical direction is D1 μm; and
wherein S1, S2, θ1, θ2 and D1 satisfy the equation:
D 1≤0.2×( S 1+ S 2)/tan θ a , wherein θ a =(θ1+θ2)/2.
2. The semiconductor device according to claim 1 , wherein 2°≤0a≤13°.
3. The semiconductor device according to claim 1 , wherein 10 μm≤D1 μm≤60 μm.
4. The semiconductor device according to claim 1 , wherein S1>S2 and 0≤(S1−S2)/(S1+S2)≤0.4.
5. The semiconductor device according to claim 4 , wherein (S1-S2) μm≤7 μm.
6. The semiconductor device according to claim 1 , wherein in a lateral view viewing from the first side surface, the third side surface forms a third acute angle with a degree of θ3 with the vertical direction, and the fourth side surface forms a fourth acute angle with a degree of θ4 with the vertical direction, θb=(θ3+θ4)/2, and wherein θb<θa.
7. The semiconductor device according to claim 6 , wherein 0°≤θb≤2°.
8. The semiconductor device according to claim 1 , wherein a length of each of the first edge and the second edge is X2 μm, and a length of each of the third edge and the fourth edge is X1 μm, and wherein X2 μm>X1 μm and 50 μm≤X1 μm≤200 μm.
9. The semiconductor device according to claim 8 , wherein 75 μm≤X2 μm≤300 m.
10. The semiconductor device according to claim 1 , wherein a thickness of the substrate ranges from 50 μm to 200 μm.
11. The semiconductor device according to claim 1 , further comprising a second modified trace formed on the third side surface;
wherein a distance between the second modified trace and the upper surface in the vertical direction is D2 μm and D2≠D1.
12. The semiconductor device according to claim 11 , further comprising a third modified trace formed on the first side surface;
wherein a distance between the third modified trace and the upper surface in the vertical direction is D3 μm and D3>D2>D1.
13. The semiconductor device according to claim 12 , wherein the substrate comprises sapphire, and a part of the first side surface between the first modified trace and the third modified trace is the r-plane of sapphire or substantially parallel with the r-plane of sapphire.
14. The semiconductor device according to claim 12 , further comprising a fourth modified trace formed on the third side surface;
wherein a distance between the fourth modified trace and the upper surface in the vertical direction is D4 μm and D4>D3>D2>D1.
15. The semiconductor device according to claim 1 , wherein the substrate comprises sapphire, and the first edge and the second edge are perpendicular to the m-axis of the sapphire.
16. The semiconductor device according to claim 1 , wherein the substrate comprises sapphire, and the third edge and the fourth edge are perpendicular to the a-axis of the sapphire.
17. The semiconductor device according to claim 1 , wherein the first modified trace comprises a plurality of modified spots arranged along the first edge.
18. The semiconductor device according to claim 1 , wherein a difference between the first acute angle and the second acute angle is less than 2°.
19. The semiconductor device according to claim 1 , wherein the semiconductor stack comprises a first semiconductor layer on the substrate, an active region on the first semiconductor layer and a second semiconductor layer on the active region.