Optoelectronic semiconductor component having an intermediate layer and method for producing the optoelectronic semiconductor component
In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of Al x Ga 1-x N composition, with 0.3≤x≤0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of Al y Ga 1-y N composition, with x*1.05≤y≤1, and wherein the intermediate layer is located directly adjacent to the active zone.
1. An optoelectronic semiconductor component comprising:
a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of Al x Ga 1-x N composition, with 0.3≤x≤0.95;
a second semiconductor layer of a p-conductivity type;
an active zone between the first semiconductor layer and the second semiconductor layer, the active zone comprising a quantum well structure; and
an intermediate layer between the first semiconductor layer and the active zone,
wherein the intermediate layer comprises a layer stack comprising first sub-layers of an Al y′ Ga 1-y′ N composition (0≤y′≤1) having a layer thickness d′, and second sub-layers of an Al y″ Ga 1-y″ N composition (0≤y″≤y′) having a layer thickness d″, alternately stacked one on top of another, and wherein x*1.05≤y avg ≤1 and y avg =(y′*d′+y″*d″)/(d′+d″), and
wherein the intermediate layer is located directly adjacent to the active zone.
2. The optoelectronic semiconductor component according to claim 1 , wherein the intermediate layer has a layer thickness greater than 2 nm.
3. The optoelectronic semiconductor component according to claim 1 , wherein the intermediate layer has a layer thickness greater than 8 nm.
4. The optoelectronic semiconductor component according to claim 3 , wherein the intermediate layer has a layer thickness greater than 40 nm.
5. The optoelectronic semiconductor component according to claim 1 , wherein the intermediate layer has a layer thickness of less than 100 nm.
6. The optoelectronic semiconductor component according to claim 1 , wherein the intermediate layer is undoped.
7. The optoelectronic semiconductor component according to claim 1 , wherein the intermediate layer is of the n-conductivity type.
8. The optoelectronic semiconductor component according to claim 1 , wherein the layer thicknesses of the first and second sub-layers are each greater than 1 nm and less than 10 nm.
9. The optoelectronic semiconductor component according to claim 1 , wherein an aluminum content of the intermediate layer decreases with increasing distance from the active zone.
10. A method for producing an optoelectronic semiconductor component, the method comprising:
forming a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of Al x Ga 1-x N composition, with 0.3≤x≤0.95;
forming a second semiconductor layer of a p-conductivity type;
forming an active zone between the first semiconductor layer and the second semiconductor layer, the active zone comprising a quantum well structure; and
forming an intermediate layer between the first semiconductor layer and the active zone,
wherein the intermediate layer comprises a layer comprises a layer stack comprising first sub-layers of an Al y′ Ga 1-y′ N composition (0≤y′≤1) having a layer thickness d′, and second sub-layers of an Al y″ Ga 1-y″ N composition (0≤y″≤y′) having a layer thickness d″, alternately stacked one on top of another, and wherein x*1.05≤y avg ≤1 and y avg =(y′*d′+y″*d″)/(d′+d″), and
wherein the intermediate layer is located directly adjacent to the active zone.
11. The method according to claim 10 , wherein the first semiconductor layer is formed from a metal-supersaturated gas mixture.
12. The method according to claim 11 , wherein the intermediate layer is formed from a metal-supersaturated gas mixture, and a degree of metal supersaturation for forming the intermediate layer is lower than that for forming the first semiconductor layer.
13. The method according to claim 12 , wherein the degree of metal supersaturation for forming the intermediate layer is at least 10% less than that for forming the first semiconductor layer.