IP Library Granted Patent US 11,616,160
Granted Patent B2
US 11,616,160 · App. 17/414,223 · Granted Mar 28, 2023

Tandem solar cell

Inventors: Giwon Lee (Seoul, KR); Goohwan Shim (Seoul, KR)
Assignee: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
H01L31/0725H01G9/2072H01L31/02168H01L31/02363H01L31/022425H01L31/0368
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Quick Facts
Patent No.
US 11,616,160
App. No.
17/414,223
Granted
Mar 28, 2023
Kind
B2
Abstract

A tandem solar cell includes a perovskite solar cell including a perovskite absorption layer, a silicon solar cell placed under the perovskite solar cell, a junction layer placed between the perovskite solar cell and the silicon solar cell, an upper electrode placed on the perovskite solar cell, and a lower electrode placed under the silicon solar cell.

Claims (24)

1. A tandem solar cell, comprising:

a perovskite solar cell comprising a perovskite absorption layer;

a silicon solar cell disposed below the perovskite solar cell;

a junction layer disposed between the perovskite solar cell and the silicon solar cell;

an upper electrode disposed on the perovskite solar cell; and

a lower electrode disposed below the silicon solar cell,

wherein the silicon solar cell comprises:

a crystalline silicon substrate,

a first conductive type semiconductor layer disposed at an upper surface of the crystalline silicon substrate,

a second conductive type semiconductor layer disposed at the lower surface of the crystalline silicon substrate, and

a tunnel layer disposed between the first conductive type semiconductor layer or between the second conductive type semiconductor layer,

wherein the second conductive type semiconductor layer, the tunnel layer, the crystalline silicon substrate, and the first conductive type semiconductor layer are sequentially stacked on an upper surface of the lower electrode,

wherein a hydrogen ion supply layer is disposed between the junction layer and the first conductive type semiconductor layer, and

wherein:

the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a first conductive type impurity or a second conductive type impurity that is different from the first conductive type impurity,

the crystalline silicon substrate includes the second conductive type impurity,

one of the first conductive type semiconductor layer or the second conductive type semiconductor layer is a polycrystalline silicon layer that is spaced apart from the crystalline silicon substrate, the tunnel layer being disposed between the polycrystalline silicon layer and the crystalline silicon substrate,

the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer is disposed on the crystalline silicon substrate and passivated by hydrogen, and

the hydrogen ion supply layer comprises a pattern having an opening through which a portion of the first conductive type semiconductor layer is exposed to the junction layer and in contact with the junction layer.

2. The tandem solar cell of claim 1 , further comprising:

an anti-reflection film disposed on a lower surface of the second conductive type semiconductor layer, wherein the lower surface of the second conductive type semiconductor layer is exposed on a rear surface of the tandem solar cell.

3. The tandem solar cell of claim 1 , wherein the perovskite solar cell comprises an electron transport layer, the perovskite absorption layer, a hole transport layer, and a transparent conductive oxide electrode layer that are sequentially stacked on an upper surface of the junction layer.

4. The tandem solar cell of claim 1 , wherein the perovskite absorption layer comprises at least one of organic halide perovskite and metal halide perovskite.

5. The tandem solar cell of claim 1 , wherein the junction layer comprises at least one of a transparent conductive oxide material, a carbonaceous conductive material, a metallic material, a conductive polymer material, or nano-crystalline silicon.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2024
From: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO., LTD.
To: TRINA SOLAR CO., LTD.
Reel/Frame 066802/0483 →
CHANGE OF NAME Recorded Dec 11, 2023
From: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
To: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO. LTD
Reel/Frame 066044/0299 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2022
From: LG ELECTRONICS INC.
To: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
Reel/Frame 061571/0754 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S COUNTRY OF RECORD PREVIOUSLY RECORDED ON REEL 056590 FRAME 0184. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Nov 18, 2021
From: LEE, GIWON; SHIM, GOOHWAN
To: LG ELECTRONICS INC.
Reel/Frame 058178/0228 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2021
From: LEE, GIWON; SHIM, GOOHWAN
To: LG ELECTRONICS INC.
Reel/Frame 056590/0184 →
Priority Claims (1)
KR 10-2018-0164546 · Dec 18, 2018 · national
Continuity (1)
Related Publication 20220209039A1 · Jun 30, 2022